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Capacitance matching by optimizing the geometry of a ferroelectric HfO2-based gate for voltage amplification
K. T. Chen, K. Y. Hsiang, C. Y. Liao, S. H. Chang, F. C. Hsieh, J. H. Liu, S. H. Chiang, H. Liang, S. T. Chang*, M. H. Lee*
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
3
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(Scopus)