Abstract
In the present study, the energetics of H-abstraction reaction on the hydrogen-covered diamond H/C(111) surface abstracted by hydrogen atom (H), carbon (CH3, C2H), nitrogen (NH2, CN), oxygen (O, OH), and halogen-containing radicals (F, Cl, Br, CF3, CCl3) in gas phase in the diamond chemical vapor deposition process were examined using ab initio calculation. The calculations for O, F, Cl, and Br radicals gave results consistent with available experimental results. These calculated results show that F, Cl, O, OH, CN, and C2H are much stronger abstractors while NH2, CH3, CF3, and CCl3 radicals are weaker abstractors, compared with this abstraction reaction abstracted by H atoms, which is in excess in gas phase. Finally, the energy barrier heights of these examined radicals are generally correlated well with an index of electrophilicity, suggesting that this index serves as a good index to account for the ability of these examined radicals to abstract the adsorbed H atoms on H/C(111) diamond surface.
| Original language | English |
|---|---|
| Journal | Surface Science |
| Volume | 494 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2001 Nov 10 |
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Keywords
- Ab initio quantum chemical methods and calculations
- Chemical vapor deposition
- Diamond
- Surface chemical reaction
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Cite this
Calculation of hydrogen abstraction reaction on hydrogen-covered H/C(1 1 1) diamond surface abstracted by non-hydrocarbon species. / Lu, Hsiu Feng; Sun, Ying-Chieh.
In: Surface Science, Vol. 494, No. 1, 10.11.2001.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Calculation of hydrogen abstraction reaction on hydrogen-covered H/C(1 1 1) diamond surface abstracted by non-hydrocarbon species
AU - Lu, Hsiu Feng
AU - Sun, Ying-Chieh
PY - 2001/11/10
Y1 - 2001/11/10
N2 - In the present study, the energetics of H-abstraction reaction on the hydrogen-covered diamond H/C(111) surface abstracted by hydrogen atom (H), carbon (CH3, C2H), nitrogen (NH2, CN), oxygen (O, OH), and halogen-containing radicals (F, Cl, Br, CF3, CCl3) in gas phase in the diamond chemical vapor deposition process were examined using ab initio calculation. The calculations for O, F, Cl, and Br radicals gave results consistent with available experimental results. These calculated results show that F, Cl, O, OH, CN, and C2H are much stronger abstractors while NH2, CH3, CF3, and CCl3 radicals are weaker abstractors, compared with this abstraction reaction abstracted by H atoms, which is in excess in gas phase. Finally, the energy barrier heights of these examined radicals are generally correlated well with an index of electrophilicity, suggesting that this index serves as a good index to account for the ability of these examined radicals to abstract the adsorbed H atoms on H/C(111) diamond surface.
AB - In the present study, the energetics of H-abstraction reaction on the hydrogen-covered diamond H/C(111) surface abstracted by hydrogen atom (H), carbon (CH3, C2H), nitrogen (NH2, CN), oxygen (O, OH), and halogen-containing radicals (F, Cl, Br, CF3, CCl3) in gas phase in the diamond chemical vapor deposition process were examined using ab initio calculation. The calculations for O, F, Cl, and Br radicals gave results consistent with available experimental results. These calculated results show that F, Cl, O, OH, CN, and C2H are much stronger abstractors while NH2, CH3, CF3, and CCl3 radicals are weaker abstractors, compared with this abstraction reaction abstracted by H atoms, which is in excess in gas phase. Finally, the energy barrier heights of these examined radicals are generally correlated well with an index of electrophilicity, suggesting that this index serves as a good index to account for the ability of these examined radicals to abstract the adsorbed H atoms on H/C(111) diamond surface.
KW - Ab initio quantum chemical methods and calculations
KW - Chemical vapor deposition
KW - Diamond
KW - Surface chemical reaction
UR - http://www.scopus.com/inward/record.url?scp=0035841379&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035841379&partnerID=8YFLogxK
U2 - 10.1016/S0039-6028(01)01542-4
DO - 10.1016/S0039-6028(01)01542-4
M3 - Article
VL - 494
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 1
ER -