C-axis electronic raman scattering in Bi_2Sr_2CaCu_2O_(8+d)

H. L. Liu, G. Blumberg, M. V. Klein, P. Guptasarma, D. G. Hinks

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We report a c-axis-polarized electronic Raman scattering study of Bi_2Sr_2CaCu_2O_(8+\delta) single crystals. In the normal state, a resonant electronic continuum extends to 1.5 eV and gains significant intensity as the incoming photon energy increases. In the superconducting state, a coherence 2\Delta peak appears around 50 meV, with a suppression of the scattering intensity at frequencies below the peak position. The peak energy, which is higher than that seen with in-plane polarizations, signifies distinctly different dynamics of quasiparticle excitations created with out-of-plane polarization.

Original languageEnglish
Pages (from-to)3524-3527
Number of pages4
JournalPhysical Review Letters
Issue number17
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Liu, H. L., Blumberg, G., Klein, M. V., Guptasarma, P., & Hinks, D. G. (1999). C-axis electronic raman scattering in Bi_2Sr_2CaCu_2O_(8+d). Physical Review Letters, 82(17), 3524-3527. https://doi.org/10.1103/PhysRevLett.82.3524