Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy

D. K. Shih*, H. H. Lin, L. W. Song, T. Y. Chu, T. R. Yang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

5 Citations (Scopus)

Abstract

The growth of InAsN alloys with various nitrogen contents on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed.

Original languageEnglish
Pages555-558
Number of pages4
Publication statusPublished - 2001
Event2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan
Duration: 2001 May 142001 May 18

Conference

Conference2001 International Conference on Indium Phosphide and Related Materials
Country/TerritoryJapan
CityNara
Period2001/05/142001/05/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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