Abstract
The growth of InAsN alloys with various nitrogen contents on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed.
Original language | English |
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Pages | 555-558 |
Number of pages | 4 |
Publication status | Published - 2001 |
Event | 2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan Duration: 2001 May 14 → 2001 May 18 |
Conference
Conference | 2001 International Conference on Indium Phosphide and Related Materials |
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Country/Territory | Japan |
City | Nara |
Period | 2001/05/14 → 2001/05/18 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering