Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy

D. K. Shih; H. H. Lin; L. W. Song; T. Y. Chu; T. R. Yang

Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy

D. K. Shih^*, H. H. Lin, L. W. Song, T. Y. Chu, T. R. Yang

^*Corresponding author for this work

Department of Physics

Research output: Contribution to conference › Paper › peer-review

5 Citations (Scopus)

Abstract

The growth of InAsN alloys with various nitrogen contents on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed.

Original language	English
Pages	555-558
Number of pages	4
Publication status	Published - 2001
Event	2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan Duration: 2001 May 14 → 2001 May 18

Conference

Conference	2001 International Conference on Indium Phosphide and Related Materials
Country/Territory	Japan
City	Nara
Period	2001/05/14 → 2001/05/18

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy",

abstract = "The growth of InAsN alloys with various nitrogen contents on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed.",

author = "Shih, {D. K.} and Lin, {H. H.} and Song, {L. W.} and Chu, {T. Y.} and Yang, {T. R.}",

year = "2001",

language = "English",

pages = "555--558",

note = "2001 International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2001 Through 18-05-2001",

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TY - CONF

T1 - Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy

AU - Shih, D. K.

AU - Lin, H. H.

AU - Song, L. W.

AU - Chu, T. Y.

AU - Yang, T. R.

PY - 2001

Y1 - 2001

N2 - The growth of InAsN alloys with various nitrogen contents on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed.

AB - The growth of InAsN alloys with various nitrogen contents on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034840919&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034840919

SP - 555

EP - 558

T2 - 2001 International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2001 through 18 May 2001

ER -

Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy

Abstract

Conference

ASJC Scopus subject areas

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