Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy

D. K. Shih, H. H. Lin, L. W. Song, T. Y. Chu, T. R. Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The growth of InAsN alloys with various nitrogen contents on (100) InP substrates by using plasma-assisted gas source molecular beam epitaxy is reported. The structural, electrical and optical properties of the alloy film are also investigated by using DXRD, Hall, and FTIR measurements. We found that the fundamental absorption edge of InAsN, as compared to that of InAs, shifts to higher energy due to Burstein-Moss effect. A dramatic increase of the electron effective mass in a nitrogen-containing III-V alloy is also observed.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages555-558
Number of pages4
Publication statusPublished - 2001
Externally publishedYes
Event2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan
Duration: 2001 May 142001 May 18

Other

Other2001 International Conference on Indium Phosphide and Related Materials
CountryJapan
CityNara
Period01/5/1401/5/18

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ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Shih, D. K., Lin, H. H., Song, L. W., Chu, T. Y., & Yang, T. R. (2001). Bulk InAsN films grown by plasma-assisted gas source molecular beam epitaxy. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 555-558)