Breakdown model and lifetime projection for thin gate oxide MOS devices

Chuan H. Liu; Robert O. Grondin; Thomas A. DeMassa; Julian J. Sanchez

Breakdown model and lifetime projection for thin gate oxide MOS devices

Chuan H. Liu^*, Robert O. Grondin, Thomas A. DeMassa, Julian J. Sanchez

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

Original language	English
Pages (from-to)	78-82
Number of pages	5
Journal	Biennial University/Government/Industry Microelectronics Symposium - Proceedings
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics - Rochester, NY, USA Duration: 1997 Jul 20 → 1997 Jul 23

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@article{46709857d4b14152a5d4bdc93aadd801,

title = "Breakdown model and lifetime projection for thin gate oxide MOS devices",

abstract = "An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.",

author = "Liu, {Chuan H.} and Grondin, {Robert O.} and DeMassa, {Thomas A.} and Sanchez, {Julian J.}",

year = "1997",

language = "English",

pages = "78--82",

journal = "Biennial University/Government/Industry Microelectronics Symposium - Proceedings",

issn = "0749-6877",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics ; Conference date: 20-07-1997 Through 23-07-1997",

}

TY - JOUR

T1 - Breakdown model and lifetime projection for thin gate oxide MOS devices

AU - Liu, Chuan H.

AU - Grondin, Robert O.

AU - DeMassa, Thomas A.

AU - Sanchez, Julian J.

PY - 1997

Y1 - 1997

N2 - An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

AB - An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

UR - http://www.scopus.com/inward/record.url?scp=0031376920&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031376920&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031376920

SN - 0749-6877

SP - 78

EP - 82

JO - Biennial University/Government/Industry Microelectronics Symposium - Proceedings

JF - Biennial University/Government/Industry Microelectronics Symposium - Proceedings

T2 - Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics

Y2 - 20 July 1997 through 23 July 1997

ER -

Breakdown model and lifetime projection for thin gate oxide MOS devices

Abstract

ASJC Scopus subject areas

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