An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.
|Number of pages||5|
|Journal||Biennial University/Government/Industry Microelectronics Symposium - Proceedings|
|Publication status||Published - 1997|
|Event||Proceedings of the 1997 12th Biennial University/Government/Industry Microelectronics - Rochester, NY, USA|
Duration: 1997 Jul 20 → 1997 Jul 23
ASJC Scopus subject areas
- Electrical and Electronic Engineering