Breakdown model and lifetime projection for thin gate oxide MOS devices

Chuan H. Liu*, Robert O. Grondin, Thomas A. DeMassa, Julian J. Sanchez

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

Original languageEnglish
Pages (from-to)78-82
Number of pages5
JournalBiennial University/Government/Industry Microelectronics Symposium - Proceedings
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 12th Biennial University/Government/Industry Microelectronics - Rochester, NY, USA
Duration: 1997 Jul 201997 Jul 23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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