Breakdown model and lifetime projection for thin gate oxide MOS devices

Chuan-Hsi Liu, Robert O. Grondin, Thomas A. DeMassa, Julian J. Sanchez

Research output: Contribution to journalConference article

Abstract

An analytical breakdown model based upon a physical understanding of thin gate oxide has been developed. With the help of this model, which self-adjusts automatically to account for all trapping conditions, the oxide lifetimes under normal operating conditions could be estimated by extrapolating the high field accelerated data.

Original languageEnglish
Pages (from-to)78-82
Number of pages5
JournalBiennial University/Government/Industry Microelectronics Symposium - Proceedings
Publication statusPublished - 1997 Dec 1
EventProceedings of the 1997 12th Biennial University/Government/Industry Microelectronics - Rochester, NY, USA
Duration: 1997 Jul 201997 Jul 23

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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