INIS
layers
100%
substrates
100%
etching
100%
silicon
100%
germanium silicides
100%
electrons
42%
carriers
42%
strains
28%
performance
14%
adjustments
14%
distribution
14%
devices
14%
engineering
14%
growth
14%
exploration
14%
diffusion
14%
charges
14%
thickness
14%
dielectrics
14%
mosfet
14%
silicon nitrides
14%
quantum mechanics
14%
mechanical effects
14%
Physics
Substrates
100%
Silicon
100%
Electrons
100%
Etching
100%
Performance
33%
Dielectrics
33%
Position (Location)
33%
Growth
33%
Adjusting
33%
Field Effect Transistor
33%
Alternatives
33%
Diffusivity
33%
Silicon Nitride
33%
Material Science
Strain
100%
Silicon
100%
Devices
50%
Electrical Property
50%
Dielectric Material
50%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Silicon Nitride
50%
Engineering
Strained Layer
100%
Conductive Path
50%