Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire

S. Dhara; A. Datta; C. T. Wu; Z. H. Lan; K. H. Chen; Y. L. Wang; Y. F. Chen; C. W. Hsu; L. C. Chen; H. M. Lin; C. C. Chen

doi:10.1063/1.1738172

Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire

S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen^*, Y. L. Wang, Y. F. Chen, C. W. Hsu, L. C. Chen, H. M. Lin, C. C. Chen

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

The properties of yellow luminescence (YL) band were discussed for the case of self-ion (Ga⁺)-implanted GaN nanowire. The YL band in nominally doped n-GaN nanowire was shown to exhibit a blueshift with accumulation of nitrogen vacancies during the self-ion irradiation process. A blue luminescence band was observed at ∼2.8 eV for the sample primarily containing large nitrogen vacancy related point-defect clusters at the fluence of amorphization. The blueshift was attributed to transitions involving shallow donor clusters to V_N clusters and probable deep acceptor linked to Ga₁ clusters in the energetic irradiation process.

Original language	English
Pages (from-to)	3486-3488
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	18
DOIs	https://doi.org/10.1063/1.1738172
Publication status	Published - 2004 May 3

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{f1d00e5b00a14272a1879715931cf038,

title = "Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire",

abstract = "The properties of yellow luminescence (YL) band were discussed for the case of self-ion (Ga+)-implanted GaN nanowire. The YL band in nominally doped n-GaN nanowire was shown to exhibit a blueshift with accumulation of nitrogen vacancies during the self-ion irradiation process. A blue luminescence band was observed at ∼2.8 eV for the sample primarily containing large nitrogen vacancy related point-defect clusters at the fluence of amorphization. The blueshift was attributed to transitions involving shallow donor clusters to VN clusters and probable deep acceptor linked to Ga1 clusters in the energetic irradiation process.",

author = "S. Dhara and A. Datta and Wu, {C. T.} and Lan, {Z. H.} and Chen, {K. H.} and Wang, {Y. L.} and Chen, {Y. F.} and Hsu, {C. W.} and Chen, {L. C.} and Lin, {H. M.} and Chen, {C. C.}",

year = "2004",

month = may,

day = "3",

doi = "10.1063/1.1738172",

language = "English",

volume = "84",

pages = "3486--3488",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire

AU - Dhara, S.

AU - Datta, A.

AU - Wu, C. T.

AU - Lan, Z. H.

AU - Chen, K. H.

AU - Wang, Y. L.

AU - Chen, Y. F.

AU - Hsu, C. W.

AU - Chen, L. C.

AU - Lin, H. M.

AU - Chen, C. C.

PY - 2004/5/3

Y1 - 2004/5/3

N2 - The properties of yellow luminescence (YL) band were discussed for the case of self-ion (Ga+)-implanted GaN nanowire. The YL band in nominally doped n-GaN nanowire was shown to exhibit a blueshift with accumulation of nitrogen vacancies during the self-ion irradiation process. A blue luminescence band was observed at ∼2.8 eV for the sample primarily containing large nitrogen vacancy related point-defect clusters at the fluence of amorphization. The blueshift was attributed to transitions involving shallow donor clusters to VN clusters and probable deep acceptor linked to Ga1 clusters in the energetic irradiation process.

AB - The properties of yellow luminescence (YL) band were discussed for the case of self-ion (Ga+)-implanted GaN nanowire. The YL band in nominally doped n-GaN nanowire was shown to exhibit a blueshift with accumulation of nitrogen vacancies during the self-ion irradiation process. A blue luminescence band was observed at ∼2.8 eV for the sample primarily containing large nitrogen vacancy related point-defect clusters at the fluence of amorphization. The blueshift was attributed to transitions involving shallow donor clusters to VN clusters and probable deep acceptor linked to Ga1 clusters in the energetic irradiation process.

UR - http://www.scopus.com/inward/record.url?scp=2542466915&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2542466915&partnerID=8YFLogxK

U2 - 10.1063/1.1738172

DO - 10.1063/1.1738172

M3 - Article

AN - SCOPUS:2542466915

SN - 0003-6951

VL - 84

SP - 3486

EP - 3488

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire

Abstract

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