Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire

S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, Y. L. Wang, Y. F. Chen, C. W. Hsu, L. C. Chen, H. M. Lin, C. C. Chen

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Abstract

The properties of yellow luminescence (YL) band were discussed for the case of self-ion (Ga+)-implanted GaN nanowire. The YL band in nominally doped n-GaN nanowire was shown to exhibit a blueshift with accumulation of nitrogen vacancies during the self-ion irradiation process. A blue luminescence band was observed at ∼2.8 eV for the sample primarily containing large nitrogen vacancy related point-defect clusters at the fluence of amorphization. The blueshift was attributed to transitions involving shallow donor clusters to VN clusters and probable deep acceptor linked to Ga1 clusters in the energetic irradiation process.

Original languageEnglish
Pages (from-to)3486-3488
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
Publication statusPublished - 2004 May 3

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Dhara, S., Datta, A., Wu, C. T., Lan, Z. H., Chen, K. H., Wang, Y. L., Chen, Y. F., Hsu, C. W., Chen, L. C., Lin, H. M., & Chen, C. C. (2004). Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire. Applied Physics Letters, 84(18), 3486-3488. https://doi.org/10.1063/1.1738172