Bipolar switching characteristics of low-power Geo resistive memory

C. H. Cheng; P. C. Chen; S. L. Liu; T. L. Wu; H. H. Hsu; Albert Chin; F. S. Yeh

doi:10.1016/j.sse.2011.04.010

Bipolar switching characteristics of low-power Geo resistive memory

C. H. Cheng
, P. C. Chen
, S. L. Liu
, T. L. Wu
, H. H. Hsu
, Albert Chin
, F. S. Yeh

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO_x dielectric. This cost-effective Ni/GeO_x/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

Original language	English
Pages (from-to)	90-93
Number of pages	4
Journal	Solid-State Electronics
Volume	62
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.04.010
Publication status	Published - 2011 Aug
Externally published	Yes

Keywords

Germanium oxide (GeO)
Resistive random access memory (RRAM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2011.04.010

Cite this

@article{7ef8050246c945819338008017199430,

title = "Bipolar switching characteristics of low-power Geo resistive memory",

abstract = "We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeOx dielectric. This cost-effective Ni/GeOx/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.",

keywords = "Germanium oxide (GeO), Resistive random access memory (RRAM)",

author = "Cheng, \{C. H.\} and Chen, \{P. C.\} and Liu, \{S. L.\} and Wu, \{T. L.\} and Hsu, \{H. H.\} and Albert Chin and Yeh, \{F. S.\}",

note = "Funding Information: This work was supported in part by National Science Council of Taiwan.",

year = "2011",

month = aug,

doi = "10.1016/j.sse.2011.04.010",

language = "English",

volume = "62",

pages = "90--93",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Bipolar switching characteristics of low-power Geo resistive memory

AU - Cheng, C. H.

AU - Chen, P. C.

AU - Liu, S. L.

AU - Wu, T. L.

AU - Hsu, H. H.

AU - Chin, Albert

AU - Yeh, F. S.

N1 - Funding Information: This work was supported in part by National Science Council of Taiwan.

PY - 2011/8

Y1 - 2011/8

N2 - We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeOx dielectric. This cost-effective Ni/GeOx/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

AB - We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeOx dielectric. This cost-effective Ni/GeOx/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

KW - Germanium oxide (GeO)

KW - Resistive random access memory (RRAM)

UR - https://www.scopus.com/pages/publications/79957962048

UR - https://www.scopus.com/pages/publications/79957962048#tab=citedBy

U2 - 10.1016/j.sse.2011.04.010

DO - 10.1016/j.sse.2011.04.010

M3 - Article

AN - SCOPUS:79957962048

SN - 0038-1101

VL - 62

SP - 90

EP - 93

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Bipolar switching characteristics of low-power Geo resistive memory

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this