Bipolar switching characteristics of low-power Geo resistive memory

C. H. Cheng, P. C. Chen, S. L. Liu, T. L. Wu, H. H. Hsu, Albert Chin, F. S. Yeh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeOx dielectric. This cost-effective Ni/GeOx/TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

Original languageEnglish
Pages (from-to)90-93
Number of pages4
JournalSolid-State Electronics
Volume62
Issue number1
DOIs
Publication statusPublished - 2011 Aug 1

Keywords

  • Germanium oxide (GeO)
  • Resistive random access memory (RRAM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Cheng, C. H., Chen, P. C., Liu, S. L., Wu, T. L., Hsu, H. H., Chin, A., & Yeh, F. S. (2011). Bipolar switching characteristics of low-power Geo resistive memory. Solid-State Electronics, 62(1), 90-93. https://doi.org/10.1016/j.sse.2011.04.010