Bipolar switching characteristics of low-power Geo resistive memory

Chun-Hu Cheng, P. C. Chen, S. L. Liu, T. L. Wu, H. H. Hsu, Albert Chin, F. S. Yeh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO x dielectric. This cost-effective Ni/GeO x /TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.

Original languageEnglish
Pages (from-to)90-93
Number of pages4
JournalSolid-State Electronics
Volume62
Issue number1
DOIs
Publication statusPublished - 2011 Aug 1

Fingerprint

random access memory
Data storage equipment
conduction
Covalent bonds
covalent bonds
low resistance
Oxides
metal oxides
Costs
filaments
Metals
traps
costs
Defects
Electrodes
electrodes
Electrons
defects
electrons

Keywords

  • Germanium oxide (GeO )
  • Resistive random access memory (RRAM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Cheng, C-H., Chen, P. C., Liu, S. L., Wu, T. L., Hsu, H. H., Chin, A., & Yeh, F. S. (2011). Bipolar switching characteristics of low-power Geo resistive memory. Solid-State Electronics, 62(1), 90-93. https://doi.org/10.1016/j.sse.2011.04.010

Bipolar switching characteristics of low-power Geo resistive memory. / Cheng, Chun-Hu; Chen, P. C.; Liu, S. L.; Wu, T. L.; Hsu, H. H.; Chin, Albert; Yeh, F. S.

In: Solid-State Electronics, Vol. 62, No. 1, 01.08.2011, p. 90-93.

Research output: Contribution to journalArticle

Cheng, C-H, Chen, PC, Liu, SL, Wu, TL, Hsu, HH, Chin, A & Yeh, FS 2011, 'Bipolar switching characteristics of low-power Geo resistive memory', Solid-State Electronics, vol. 62, no. 1, pp. 90-93. https://doi.org/10.1016/j.sse.2011.04.010
Cheng, Chun-Hu ; Chen, P. C. ; Liu, S. L. ; Wu, T. L. ; Hsu, H. H. ; Chin, Albert ; Yeh, F. S. / Bipolar switching characteristics of low-power Geo resistive memory. In: Solid-State Electronics. 2011 ; Vol. 62, No. 1. pp. 90-93.
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