Bipolar conductivity in nanocrystallized TiO 2

D. R. Islamov; V. A. Gritsenko; C. H. Cheng; A. Chin

doi:10.1063/1.4737016

Bipolar conductivity in nanocrystallized TiO ₂

D. R. Islamov^*, V. A. Gritsenko, C. H. Cheng, A. Chin

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This study calculated the contribution of electrons and holes to TiO ₂ conductivity in Si/TiO ₂/Ni structures by conducting experiments on the injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of TiO ₂, enabling two-band conductivity.

Original language	English
Article number	032101
Journal	Applied Physics Letters
Volume	101
Issue number	3
DOIs	https://doi.org/10.1063/1.4737016
Publication status	Published - 2012 Jul 16

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4737016

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title = "Bipolar conductivity in nanocrystallized TiO 2 ",

abstract = "This study calculated the contribution of electrons and holes to TiO 2 conductivity in Si/TiO 2/Ni structures by conducting experiments on the injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of TiO 2, enabling two-band conductivity.",

author = "Islamov, {D. R.} and Gritsenko, {V. A.} and Cheng, {C. H.} and A. Chin",

note = "Funding Information: This work was supported by project No. 5 of the Siberian Branch of the Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3.",

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AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Cheng, C. H.

AU - Chin, A.

N1 - Funding Information: This work was supported by project No. 5 of the Siberian Branch of the Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3.

PY - 2012/7/16

Y1 - 2012/7/16

N2 - This study calculated the contribution of electrons and holes to TiO 2 conductivity in Si/TiO 2/Ni structures by conducting experiments on the injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of TiO 2, enabling two-band conductivity.

AB - This study calculated the contribution of electrons and holes to TiO 2 conductivity in Si/TiO 2/Ni structures by conducting experiments on the injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of TiO 2, enabling two-band conductivity.

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ER -

Bipolar conductivity in nanocrystallized TiO ₂

Abstract

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