Bipolar conductivity in amorphous HfO2

D. R. Islamov; V. A. Gritsenko; C. H. Cheng; A. Chin

doi:10.1063/1.3626599

Bipolar conductivity in amorphous HfO₂

D. R. Islamov^*, V. A. Gritsenko, C. H. Cheng, A. Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

This study calculates the contribution of electrons and holes to HfO ₂ conductivity in Si/HfO₂/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO₂, allowing HfO₂ to exhibit two-band conductivity.

Original language	English
Article number	072109
Journal	Applied Physics Letters
Volume	99
Issue number	7
DOIs	https://doi.org/10.1063/1.3626599
Publication status	Published - 2011 Aug 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3626599

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title = "Bipolar conductivity in amorphous HfO2",

abstract = "This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.",

author = "Islamov, {D. R.} and Gritsenko, {V. A.} and Cheng, {C. H.} and A. Chin",

note = "Funding Information: The authors would like to thank S. S. Shaimeev for his assistance with running the experiment. This work was supported by project No. 150 of Siberian Branch of the Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3.",

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AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Cheng, C. H.

AU - Chin, A.

N1 - Funding Information: The authors would like to thank S. S. Shaimeev for his assistance with running the experiment. This work was supported by project No. 150 of Siberian Branch of the Russian Academy of Sciences and the National Science Council, Taiwan, under Grant No. NSC-100-2923-E-009-001-MY3.

PY - 2011/8/15

Y1 - 2011/8/15

N2 - This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.

AB - This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.

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DO - 10.1063/1.3626599

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ER -

Bipolar conductivity in amorphous HfO₂

Abstract

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