Bipolar conductivity in amorphous HfO2

D. R. Islamov, V. A. Gritsenko, Chun-Hu Cheng, A. Chin

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

This study calculates the contribution of electrons and holes to HfO 2 conductivity in Si/HfO2/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO2, allowing HfO2 to exhibit two-band conductivity.

Original languageEnglish
Article number072109
JournalApplied Physics Letters
Volume99
Issue number7
DOIs
Publication statusPublished - 2011 Aug 15

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conductivity
minority carriers
electrons
injection
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Islamov, D. R., Gritsenko, V. A., Cheng, C-H., & Chin, A. (2011). Bipolar conductivity in amorphous HfO2. Applied Physics Letters, 99(7), [072109]. https://doi.org/10.1063/1.3626599

Bipolar conductivity in amorphous HfO2. / Islamov, D. R.; Gritsenko, V. A.; Cheng, Chun-Hu; Chin, A.

In: Applied Physics Letters, Vol. 99, No. 7, 072109, 15.08.2011.

Research output: Contribution to journalArticle

Islamov, DR, Gritsenko, VA, Cheng, C-H & Chin, A 2011, 'Bipolar conductivity in amorphous HfO2', Applied Physics Letters, vol. 99, no. 7, 072109. https://doi.org/10.1063/1.3626599
Islamov, D. R. ; Gritsenko, V. A. ; Cheng, Chun-Hu ; Chin, A. / Bipolar conductivity in amorphous HfO2. In: Applied Physics Letters. 2011 ; Vol. 99, No. 7.
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