Bipolar Conduction in Tin-Oxide Semiconductor Channel Treated by Oxygen Plasma for Low-Power Thin-Film Transistor Application

Po Chun Chen, Yung Hsien Wu, Zhi Wei Zheng, Yu Chien Chiu, Chun Hu Cheng, Shiang Shiou Yen, Hsiao Hsuan Hsu, Chun Yen Chang

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Abstract

In this paper, we investigated the bipolar conduction mechanism in thin-film transistors (TFTs) with oxygen plasma treatment on tin-oxide channel. The optimized p-type thin-oxide TFTs showed an on/off ratio of >104 , a threshold voltage of -1.05 V, and a field-effect mobility of 2.14 cm2 · V-1 · s-1. By increasing the exposure time of oxygen plasma, excess oxygen was incorporated to thin-oxide channel and converted thin monoxide to oxygen-rich n-type thin dioxide, which in turn led to n-type operation. It indicated that oxygen plasma was the critical factor to determine oxygen concentration, oxygen vacancies, metal ions and channel polarity. This proposed oxygen-content tuning through plasma treatment approach shows great promise in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.

Original languageEnglish
Article number7165597
Pages (from-to)224-227
Number of pages4
JournalJournal of Display Technology
Volume12
Issue number3
DOIs
Publication statusPublished - 2016 Mar

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Keywords

  • Bipolar
  • oxygen plasma treatment
  • thin-film transistor (TFT)
  • tin-monoxide (SnO)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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