Bilayer-based antiferroelectric HfZrO2tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory

K. Y. Hsiang; C. Y. Liao; J. H. Liu; J. F. Wang; S. H. Chiang; S. H. Chang; F. C. Hsieh; H. Liang; C. Y. Lin; Z. F. Lou; T. H. Hou; C. W. Liu; M. H. Lee

doi:10.1109/LED.2021.3107940

Bilayer-based antiferroelectric HfZrO₂tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory

K. Y. Hsiang, C. Y. Liao, J. H. Liu, J. F. Wang, S. H. Chiang, S. H. Chang, F. C. Hsieh, H. Liang, C. Y. Lin, Z. F. Lou, T. H. Hou, C. W. Liu, M. H. Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of >100×, a TER (tunneling electroresistance) of >50×, multilevel states, >104 sec retention, and a cycling endurance as high as 108. The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.

Original language	English
Pages (from-to)	1464-1467
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	42
Issue number	10
DOIs	https://doi.org/10.1109/LED.2021.3107940
Publication status	Published - 2021 Oct

Keywords

Antiferroelectric
Ferroelectric
HfZrO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2021.3107940

Cite this

Hsiang, K. Y., Liao, C. Y., Liu, J. H., Wang, J. F., Chiang, S. H., Chang, S. H., Hsieh, F. C., Liang, H., Lin, C. Y., Lou, Z. F., Hou, T. H., Liu, C. W., & Lee, M. H. (2021). Bilayer-based antiferroelectric HfZrO₂tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory. IEEE Electron Device Letters, 42(10), 1464-1467. https://doi.org/10.1109/LED.2021.3107940

Hsiang, KY, Liao, CY, Liu, JH, Wang, JF, Chiang, SH, Chang, SH, Hsieh, FC, Liang, H, Lin, CY, Lou, ZF, Hou, TH, Liu, CW & Lee, MH 2021, 'Bilayer-based antiferroelectric HfZrO₂tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory', IEEE Electron Device Letters, vol. 42, no. 10, pp. 1464-1467. https://doi.org/10.1109/LED.2021.3107940

@article{e1529cc6dc38447cb6f6784b2aa00364,

title = "Bilayer-based antiferroelectric HfZrO2tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory",

abstract = "The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of >100×, a TER (tunneling electroresistance) of >50×, multilevel states, >104 sec retention, and a cycling endurance as high as 108. The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.",

keywords = "Antiferroelectric, Ferroelectric, HfZrO",

author = "Hsiang, {K. Y.} and Liao, {C. Y.} and Liu, {J. H.} and Wang, {J. F.} and Chiang, {S. H.} and Chang, {S. H.} and Hsieh, {F. C.} and H. Liang and Lin, {C. Y.} and Lou, {Z. F.} and Hou, {T. H.} and Liu, {C. W.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.",

year = "2021",

month = oct,

doi = "10.1109/LED.2021.3107940",

language = "English",

volume = "42",

pages = "1464--1467",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Bilayer-based antiferroelectric HfZrO2tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory

AU - Hsiang, K. Y.

AU - Liao, C. Y.

AU - Liu, J. H.

AU - Wang, J. F.

AU - Chiang, S. H.

AU - Chang, S. H.

AU - Hsieh, F. C.

AU - Liang, H.

AU - Lin, C. Y.

AU - Lou, Z. F.

AU - Hou, T. H.

AU - Liu, C. W.

AU - Lee, M. H.

PY - 2021/10

Y1 - 2021/10

N2 - The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of >100×, a TER (tunneling electroresistance) of >50×, multilevel states, >104 sec retention, and a cycling endurance as high as 108. The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.

AB - The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of >100×, a TER (tunneling electroresistance) of >50×, multilevel states, >104 sec retention, and a cycling endurance as high as 108. The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.

KW - Antiferroelectric

KW - Ferroelectric

KW - HfZrO

UR - http://www.scopus.com/inward/record.url?scp=85114593435&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85114593435&partnerID=8YFLogxK

U2 - 10.1109/LED.2021.3107940

DO - 10.1109/LED.2021.3107940

M3 - Article

AN - SCOPUS:85114593435

SN - 0741-3106

VL - 42

SP - 1464

EP - 1467

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -