Bilayer-based antiferroelectric HfZrO2tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory

K. Y. Hsiang; C. Y. Liao; J. H. Liu; J. F. Wang; S. H. Chiang; S. H. Chang; F. C. Hsieh; H. Liang; C. Y. Lin; Z. F. Lou; T. H. Hou; C. W. Liu; M. H. Lee

doi:10.1109/LED.2021.3107940

Bilayer-based antiferroelectric HfZrO₂tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory

K. Y. Hsiang, C. Y. Liao, J. H. Liu, J. F. Wang, S. H. Chiang, S. H. Chang, F. C. Hsieh, H. Liang, C. Y. Lin, Z. F. Lou, T. H. Hou, C. W. Liu, M. H. Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of >100×, a TER (tunneling electroresistance) of >50×, multilevel states, >104 sec retention, and a cycling endurance as high as 108. The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.

Original language	English
Pages (from-to)	1464-1467
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	42
Issue number	10
DOIs	https://doi.org/10.1109/LED.2021.3107940
Publication status	Published - 2021 Oct

Keywords

Antiferroelectric
Ferroelectric
HfZrO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2021.3107940

Cite this

Hsiang, K. Y., Liao, C. Y., Liu, J. H., Wang, J. F., Chiang, S. H., Chang, S. H., Hsieh, F. C., Liang, H., Lin, C. Y., Lou, Z. F., Hou, T. H., Liu, C. W., & Lee, M. H. (2021). Bilayer-based antiferroelectric HfZrO₂tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory. IEEE Electron Device Letters, 42(10), 1464-1467. https://doi.org/10.1109/LED.2021.3107940

Hsiang, KY, Liao, CY, Liu, JH, Wang, JF, Chiang, SH, Chang, SH, Hsieh, FC, Liang, H, Lin, CY, Lou, ZF, Hou, TH, Liu, CW & Lee, MH 2021, 'Bilayer-based antiferroelectric HfZrO₂tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory', IEEE Electron Device Letters, vol. 42, no. 10, pp. 1464-1467. https://doi.org/10.1109/LED.2021.3107940

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title = "Bilayer-based antiferroelectric HfZrO2tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory",

abstract = "The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of >100×, a TER (tunneling electroresistance) of >50×, multilevel states, >104 sec retention, and a cycling endurance as high as 108. The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.",

keywords = "Antiferroelectric, Ferroelectric, HfZrO",

author = "Hsiang, {K. Y.} and Liao, {C. Y.} and Liu, {J. H.} and Wang, {J. F.} and Chiang, {S. H.} and Chang, {S. H.} and Hsieh, {F. C.} and H. Liang and Lin, {C. Y.} and Lou, {Z. F.} and Hou, {T. H.} and Liu, {C. W.} and Lee, {M. H.}",

note = "Funding Information: Manuscript received August 12, 2021; accepted August 23, 2021. Date of publication August 25, 2021; date of current version September 27, 2021. This work was supported in part by the Ministry of Science and Technology (MOST) under Grant 110-2218-E-003-005, Grant 110-2218-E-A49-014-MBK, and Grant 109-2622-8-002-003; and in part by Taiwan Semiconductor Research Institute (TSRI) and the Nano Facility Center (NFC), Taiwan. The review of this letter was arranged by Editor U. Schroeder. (Corresponding author: M. H. Lee.) K.-Y. Hsiang is with the Department of Electronics Engineering, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, and also with the Institute of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan. Publisher Copyright: {\textcopyright} 2021 IEEE.",

year = "2021",

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doi = "10.1109/LED.2021.3107940",

language = "English",

volume = "42",

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AU - Hsiang, K. Y.

AU - Liao, C. Y.

AU - Liu, J. H.

AU - Wang, J. F.

AU - Chiang, S. H.

AU - Chang, S. H.

AU - Hsieh, F. C.

AU - Liang, H.

AU - Lin, C. Y.

AU - Lou, Z. F.

AU - Hou, T. H.

AU - Liu, C. W.

AU - Lee, M. H.

N1 - Funding Information: Manuscript received August 12, 2021; accepted August 23, 2021. Date of publication August 25, 2021; date of current version September 27, 2021. This work was supported in part by the Ministry of Science and Technology (MOST) under Grant 110-2218-E-003-005, Grant 110-2218-E-A49-014-MBK, and Grant 109-2622-8-002-003; and in part by Taiwan Semiconductor Research Institute (TSRI) and the Nano Facility Center (NFC), Taiwan. The review of this letter was arranged by Editor U. Schroeder. (Corresponding author: M. H. Lee.) K.-Y. Hsiang is with the Department of Electronics Engineering, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, and also with the Institute of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, Taiwan. Publisher Copyright: © 2021 IEEE.

PY - 2021/10

Y1 - 2021/10

N2 - The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of >100×, a TER (tunneling electroresistance) of >50×, multilevel states, >104 sec retention, and a cycling endurance as high as 108. The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.

AB - The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of >100×, a TER (tunneling electroresistance) of >50×, multilevel states, >104 sec retention, and a cycling endurance as high as 108. The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.

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KW - HfZrO

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