Bilayer-based antiferroelectric HfZrO2tunneling junction with high tunneling electroresistance and multilevel nonvolatile memory

K. Y. Hsiang, C. Y. Liao, J. H. Liu, J. F. Wang, S. H. Chiang, S. H. Chang, F. C. Hsieh, H. Liang, C. Y. Lin, Z. F. Lou, T. H. Hou, C. W. Liu, M. H. Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The bilayer-based Antiferroelectric Tunneling Junction (AFTJ) with ferroelectric (FE) HfZrO2 (HZO) and dielectric (DE) Al2O3 demonstrates a current ratio of >100×, a TER (tunneling electroresistance) of >50×, multilevel states, >104 sec retention, and a cycling endurance as high as 108. The concept of tunneling current through DE in an antiferroelectric (AFE) system enhances the capacity to modulate the current/TER ratio and makes the AFTJ feasible for low-power crossbar eNVM (embedded nonvolatile memory) applications.

Original languageEnglish
Pages (from-to)1464-1467
Number of pages4
JournalIEEE Electron Device Letters
Volume42
Issue number10
DOIs
Publication statusPublished - 2021 Oct

Keywords

  • Antiferroelectric
  • Ferroelectric
  • HfZrO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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