Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique

Bohr Ran Huang; Chih Ta Chia; Ming Chin Chang; Chia Liang Cheng

doi:10.1016/S0925-9635(02)00245-5

Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique

Bohr Ran Huang
, Chih Ta Chia
, Ming Chin Chang
, Chia Liang Cheng^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Large area polycrystalline diamond films up to 3 inches in diameter were synthesized on p-type silicon (100) substrate by microwave plasma chemical vapor deposition (MPCVD) using a bias enhanced growth (BEG) technique. Scanning electron microscopy (SEM) reveals half-spherical, amorphous crystalline diamonds of ballas shape were deposited under no bias. Diamond (100) faceted film can be produced at -250 V bias. When the negative bias was increased to -450 V, only (111) faceted faces was produced. Raman spectra obtained using both 514 and 633 nm lasers were analyzed to reveal detailed structure of the diamond films. At -250 V bias, optimal diamond growths were found from Raman spectral analysis. The analysis of C_1S XPS spectrum indicated the large ratio of sp³/s²p at -250 V implying carbon atoms would have more chance to connect into sp³ carbon phase of diamond.

Original language	English
Pages (from-to)	26-32
Number of pages	7
Journal	Diamond and Related Materials
Volume	12
Issue number	1
DOIs	https://doi.org/10.1016/S0925-9635(02)00245-5
Publication status	Published - 2003 Jan

Keywords

Bias enhanced growth (BEG)
MPCVD
Polycrystalline diamond film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-9635(02)00245-5

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@article{7003dfa90fc54b0783cd3fce87f70c3b,

title = "Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique",

abstract = "Large area polycrystalline diamond films up to 3 inches in diameter were synthesized on p-type silicon (100) substrate by microwave plasma chemical vapor deposition (MPCVD) using a bias enhanced growth (BEG) technique. Scanning electron microscopy (SEM) reveals half-spherical, amorphous crystalline diamonds of ballas shape were deposited under no bias. Diamond (100) faceted film can be produced at -250 V bias. When the negative bias was increased to -450 V, only (111) faceted faces was produced. Raman spectra obtained using both 514 and 633 nm lasers were analyzed to reveal detailed structure of the diamond films. At -250 V bias, optimal diamond growths were found from Raman spectral analysis. The analysis of C1S XPS spectrum indicated the large ratio of sp3/s2p at -250 V implying carbon atoms would have more chance to connect into sp3 carbon phase of diamond.",

keywords = "Bias enhanced growth (BEG), MPCVD, Polycrystalline diamond film",

author = "Huang, \{Bohr Ran\} and Chia, \{Chih Ta\} and Chang, \{Ming Chin\} and Cheng, \{Chia Liang\}",

note = "Funding Information: The authors would like to thank the National Science Council of Taiwan, Republic of China for financially supporting this research under Contracts NSC-89-2112-M-259-012 and NSC90-2216-E-224-004. ",

year = "2003",

month = jan,

doi = "10.1016/S0925-9635(02)00245-5",

language = "English",

volume = "12",

pages = "26--32",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "1",

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TY - JOUR

T1 - Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique

AU - Huang, Bohr Ran

AU - Chia, Chih Ta

AU - Chang, Ming Chin

AU - Cheng, Chia Liang

N1 - Funding Information: The authors would like to thank the National Science Council of Taiwan, Republic of China for financially supporting this research under Contracts NSC-89-2112-M-259-012 and NSC90-2216-E-224-004.

PY - 2003/1

Y1 - 2003/1

N2 - Large area polycrystalline diamond films up to 3 inches in diameter were synthesized on p-type silicon (100) substrate by microwave plasma chemical vapor deposition (MPCVD) using a bias enhanced growth (BEG) technique. Scanning electron microscopy (SEM) reveals half-spherical, amorphous crystalline diamonds of ballas shape were deposited under no bias. Diamond (100) faceted film can be produced at -250 V bias. When the negative bias was increased to -450 V, only (111) faceted faces was produced. Raman spectra obtained using both 514 and 633 nm lasers were analyzed to reveal detailed structure of the diamond films. At -250 V bias, optimal diamond growths were found from Raman spectral analysis. The analysis of C1S XPS spectrum indicated the large ratio of sp3/s2p at -250 V implying carbon atoms would have more chance to connect into sp3 carbon phase of diamond.

AB - Large area polycrystalline diamond films up to 3 inches in diameter were synthesized on p-type silicon (100) substrate by microwave plasma chemical vapor deposition (MPCVD) using a bias enhanced growth (BEG) technique. Scanning electron microscopy (SEM) reveals half-spherical, amorphous crystalline diamonds of ballas shape were deposited under no bias. Diamond (100) faceted film can be produced at -250 V bias. When the negative bias was increased to -450 V, only (111) faceted faces was produced. Raman spectra obtained using both 514 and 633 nm lasers were analyzed to reveal detailed structure of the diamond films. At -250 V bias, optimal diamond growths were found from Raman spectral analysis. The analysis of C1S XPS spectrum indicated the large ratio of sp3/s2p at -250 V implying carbon atoms would have more chance to connect into sp3 carbon phase of diamond.

KW - Bias enhanced growth (BEG)

KW - MPCVD

KW - Polycrystalline diamond film

UR - https://www.scopus.com/pages/publications/0037221870

UR - https://www.scopus.com/pages/publications/0037221870#tab=citedBy

U2 - 10.1016/S0925-9635(02)00245-5

DO - 10.1016/S0925-9635(02)00245-5

M3 - Article

AN - SCOPUS:0037221870

SN - 0925-9635

VL - 12

SP - 26

EP - 32

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 1

ER -

Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique

Abstract

Keywords

ASJC Scopus subject areas

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