Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique

Bohr Ran Huang; Chih Ta Chia; Ming Chin Chang; Chia Liang Cheng

doi:10.1016/S0925-9635(02)00245-5

Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique

Bohr Ran Huang, Chih Ta Chia, Ming Chin Chang, Chia Liang Cheng^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Large area polycrystalline diamond films up to 3 inches in diameter were synthesized on p-type silicon (100) substrate by microwave plasma chemical vapor deposition (MPCVD) using a bias enhanced growth (BEG) technique. Scanning electron microscopy (SEM) reveals half-spherical, amorphous crystalline diamonds of ballas shape were deposited under no bias. Diamond (100) faceted film can be produced at -250 V bias. When the negative bias was increased to -450 V, only (111) faceted faces was produced. Raman spectra obtained using both 514 and 633 nm lasers were analyzed to reveal detailed structure of the diamond films. At -250 V bias, optimal diamond growths were found from Raman spectral analysis. The analysis of C_1S XPS spectrum indicated the large ratio of sp³/s²p at -250 V implying carbon atoms would have more chance to connect into sp³ carbon phase of diamond.

Original language	English
Pages (from-to)	26-32
Number of pages	7
Journal	Diamond and Related Materials
Volume	12
Issue number	1
DOIs	https://doi.org/10.1016/S0925-9635(02)00245-5
Publication status	Published - 2003 Jan

Keywords

Bias enhanced growth (BEG)
MPCVD
Polycrystalline diamond film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-9635(02)00245-5

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title = "Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique",

abstract = "Large area polycrystalline diamond films up to 3 inches in diameter were synthesized on p-type silicon (100) substrate by microwave plasma chemical vapor deposition (MPCVD) using a bias enhanced growth (BEG) technique. Scanning electron microscopy (SEM) reveals half-spherical, amorphous crystalline diamonds of ballas shape were deposited under no bias. Diamond (100) faceted film can be produced at -250 V bias. When the negative bias was increased to -450 V, only (111) faceted faces was produced. Raman spectra obtained using both 514 and 633 nm lasers were analyzed to reveal detailed structure of the diamond films. At -250 V bias, optimal diamond growths were found from Raman spectral analysis. The analysis of C1S XPS spectrum indicated the large ratio of sp3/s2p at -250 V implying carbon atoms would have more chance to connect into sp3 carbon phase of diamond.",

keywords = "Bias enhanced growth (BEG), MPCVD, Polycrystalline diamond film",

author = "Huang, {Bohr Ran} and Chia, {Chih Ta} and Chang, {Ming Chin} and Cheng, {Chia Liang}",

note = "Funding Information: The authors would like to thank the National Science Council of Taiwan, Republic of China for financially supporting this research under Contracts NSC-89-2112-M-259-012 and NSC90-2216-E-224-004. ",

year = "2003",

month = jan,

doi = "10.1016/S0925-9635(02)00245-5",

language = "English",

volume = "12",

pages = "26--32",

journal = "Diamond and Related Materials",

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T1 - Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique

AU - Huang, Bohr Ran

AU - Chia, Chih Ta

AU - Chang, Ming Chin

AU - Cheng, Chia Liang

N1 - Funding Information: The authors would like to thank the National Science Council of Taiwan, Republic of China for financially supporting this research under Contracts NSC-89-2112-M-259-012 and NSC90-2216-E-224-004.

PY - 2003/1

Y1 - 2003/1

N2 - Large area polycrystalline diamond films up to 3 inches in diameter were synthesized on p-type silicon (100) substrate by microwave plasma chemical vapor deposition (MPCVD) using a bias enhanced growth (BEG) technique. Scanning electron microscopy (SEM) reveals half-spherical, amorphous crystalline diamonds of ballas shape were deposited under no bias. Diamond (100) faceted film can be produced at -250 V bias. When the negative bias was increased to -450 V, only (111) faceted faces was produced. Raman spectra obtained using both 514 and 633 nm lasers were analyzed to reveal detailed structure of the diamond films. At -250 V bias, optimal diamond growths were found from Raman spectral analysis. The analysis of C1S XPS spectrum indicated the large ratio of sp3/s2p at -250 V implying carbon atoms would have more chance to connect into sp3 carbon phase of diamond.

AB - Large area polycrystalline diamond films up to 3 inches in diameter were synthesized on p-type silicon (100) substrate by microwave plasma chemical vapor deposition (MPCVD) using a bias enhanced growth (BEG) technique. Scanning electron microscopy (SEM) reveals half-spherical, amorphous crystalline diamonds of ballas shape were deposited under no bias. Diamond (100) faceted film can be produced at -250 V bias. When the negative bias was increased to -450 V, only (111) faceted faces was produced. Raman spectra obtained using both 514 and 633 nm lasers were analyzed to reveal detailed structure of the diamond films. At -250 V bias, optimal diamond growths were found from Raman spectral analysis. The analysis of C1S XPS spectrum indicated the large ratio of sp3/s2p at -250 V implying carbon atoms would have more chance to connect into sp3 carbon phase of diamond.

KW - Bias enhanced growth (BEG)

KW - MPCVD

KW - Polycrystalline diamond film

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JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 1

ER -

Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique

Abstract

Keywords

ASJC Scopus subject areas

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