Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique

Bohr Ran Huang, Chi-Ta Chia, Ming Chin Chang, Chia Liang Cheng

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Large area polycrystalline diamond films up to 3 inches in diameter were synthesized on p-type silicon (100) substrate by microwave plasma chemical vapor deposition (MPCVD) using a bias enhanced growth (BEG) technique. Scanning electron microscopy (SEM) reveals half-spherical, amorphous crystalline diamonds of ballas shape were deposited under no bias. Diamond (100) faceted film can be produced at -250 V bias. When the negative bias was increased to -450 V, only (111) faceted faces was produced. Raman spectra obtained using both 514 and 633 nm lasers were analyzed to reveal detailed structure of the diamond films. At -250 V bias, optimal diamond growths were found from Raman spectral analysis. The analysis of C1S XPS spectrum indicated the large ratio of sp3/s2p at -250 V implying carbon atoms would have more chance to connect into sp3 carbon phase of diamond.

Original languageEnglish
Pages (from-to)26-32
Number of pages7
JournalDiamond and Related Materials
Volume12
Issue number1
DOIs
Publication statusPublished - 2003 Jan 1

Fingerprint

Diamond
Diamond films
diamond films
Diamonds
diamonds
Carbon
Silicon
Spectrum analysis
carbon
Raman scattering
Chemical vapor deposition
X ray photoelectron spectroscopy
Microwaves
spectrum analysis
Crystalline materials
Plasmas
Atoms
Scanning electron microscopy
Lasers
vapor deposition

Keywords

  • Bias enhanced growth (BEG)
  • MPCVD
  • Polycrystalline diamond film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique. / Huang, Bohr Ran; Chia, Chi-Ta; Chang, Ming Chin; Cheng, Chia Liang.

In: Diamond and Related Materials, Vol. 12, No. 1, 01.01.2003, p. 26-32.

Research output: Contribution to journalArticle

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AB - Large area polycrystalline diamond films up to 3 inches in diameter were synthesized on p-type silicon (100) substrate by microwave plasma chemical vapor deposition (MPCVD) using a bias enhanced growth (BEG) technique. Scanning electron microscopy (SEM) reveals half-spherical, amorphous crystalline diamonds of ballas shape were deposited under no bias. Diamond (100) faceted film can be produced at -250 V bias. When the negative bias was increased to -450 V, only (111) faceted faces was produced. Raman spectra obtained using both 514 and 633 nm lasers were analyzed to reveal detailed structure of the diamond films. At -250 V bias, optimal diamond growths were found from Raman spectral analysis. The analysis of C1S XPS spectrum indicated the large ratio of sp3/s2p at -250 V implying carbon atoms would have more chance to connect into sp3 carbon phase of diamond.

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