Bias effects on large area polycrystalline diamond films synthesized by the bias enhanced growth technique

Bohr Ran Huang, Chih Ta Chia, Ming Chin Chang, Chia Liang Cheng

Research output: Contribution to journalArticle

8 Citations (Scopus)


Large area polycrystalline diamond films up to 3 inches in diameter were synthesized on p-type silicon (100) substrate by microwave plasma chemical vapor deposition (MPCVD) using a bias enhanced growth (BEG) technique. Scanning electron microscopy (SEM) reveals half-spherical, amorphous crystalline diamonds of ballas shape were deposited under no bias. Diamond (100) faceted film can be produced at -250 V bias. When the negative bias was increased to -450 V, only (111) faceted faces was produced. Raman spectra obtained using both 514 and 633 nm lasers were analyzed to reveal detailed structure of the diamond films. At -250 V bias, optimal diamond growths were found from Raman spectral analysis. The analysis of C1S XPS spectrum indicated the large ratio of sp3/s2p at -250 V implying carbon atoms would have more chance to connect into sp3 carbon phase of diamond.

Original languageEnglish
Pages (from-to)26-32
Number of pages7
JournalDiamond and Related Materials
Issue number1
Publication statusPublished - 2003 Jan 1



  • Bias enhanced growth (BEG)
  • Polycrystalline diamond film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this