Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

M. H. Lee; Y. Y. Lin; Y. J. Yang; F. C. Hsieh; S. T. Chang; M. H. Liao; K. S. Li; C. W. Liu; K. T. Chen; C. Y. Liao; G. Y. Siang; C. Lo; H. Y. Chen; Y. J. Tseng; C. Y. Chueh; C. Chang

doi:10.1109/IEDM19573.2019.8993581

Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs

M. H. Lee, Y. Y. Lin, Y. J. Yang, F. C. Hsieh, S. T. Chang, M. H. Liao, K. S. Li, C. W. Liu, K. T. Chen, C. Y. Liao, G. Y. Siang, C. Lo, H. Y. Chen, Y. J. Tseng, C. Y. Chueh, C. Chang

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

Being the first demonstration of quasi-antiferroelertic Hf_1-xZr_xO₂ (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SS_for=51mV/dec, SS_rev=53mV/dec, ΔV_T<1mV) for low onset voltage and high speed response, both forward backward (reverse) sweep exhibit obvious N-DIBL and NDR of QAFE-HZO to confirm NC effect. There is an operation window for steep SS without hysteresis for QAFE-HZO as compared with accompanying a non-negligible hysteresis FE-HZO (Zr=50%). The QAFE-HZO is also serviceable for both n-type and p-type channel FETs. The voltage transient response presents NC time 48%-77% improvement and V_FE overlap of negative dQ/dV_FE for forward and reverse, indicating non-hysteretic QAFE-HZO.

Original language	English
Title of host publication	2019 IEEE International Electron Devices Meeting, IEDM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728140315
DOIs	https://doi.org/10.1109/IEDM19573.2019.8993581
Publication status	Published - 2019 Dec
Event	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: 2019 Dec 7 → 2019 Dec 11

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2019-December
ISSN (Print)	0163-1918

Conference

Conference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Country/Territory	United States
City	San Francisco
Period	2019/12/07 → 2019/12/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1109/IEDM19573.2019.8993581

Cite this

Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y., & Chang, C. (2019). Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 Article 8993581 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993581

Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs. / Lee, M. H.; Lin, Y. Y.; Yang, Y. J. et al.
2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8993581 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, MH, Lin, YY, Yang, YJ, Hsieh, FC, Chang, ST, Liao, MH, Li, KS, Liu, CW, Chen, KT, Liao, CY, Siang, GY, Lo, C, Chen, HY, Tseng, YJ, Chueh, CY & Chang, C 2019, Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993581, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 2019/12/07. https://doi.org/10.1109/IEDM19573.2019.8993581

Lee MH, Lin YY, Yang YJ, Hsieh FC, Chang ST, Liao MH et al. Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs. In 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8993581. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM19573.2019.8993581

Lee, M. H. ; Lin, Y. Y. ; Yang, Y. J. et al. / Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf_0.25Zr_0.75O₂ Negative Capacitance FETs. 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs",

abstract = "Being the first demonstration of quasi-antiferroelertic Hf1-xZrxO2 (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SSfor=51mV/dec, SSrev=53mV/dec, ΔVT<1mV) for low onset voltage and high speed response, both forward backward (reverse) sweep exhibit obvious N-DIBL and NDR of QAFE-HZO to confirm NC effect. There is an operation window for steep SS without hysteresis for QAFE-HZO as compared with accompanying a non-negligible hysteresis FE-HZO (Zr=50%). The QAFE-HZO is also serviceable for both n-type and p-type channel FETs. The voltage transient response presents NC time 48%-77% improvement and VFE overlap of negative dQ/dVFE for forward and reverse, indicating non-hysteretic QAFE-HZO.",

author = "Lee, {M. H.} and Lin, {Y. Y.} and Yang, {Y. J.} and Hsieh, {F. C.} and Chang, {S. T.} and Liao, {M. H.} and Li, {K. S.} and Liu, {C. W.} and Chen, {K. T.} and Liao, {C. Y.} and Siang, {G. Y.} and C. Lo and Chen, {H. Y.} and Tseng, {Y. J.} and Chueh, {C. Y.} and C. Chang",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",

year = "2019",

month = dec,

doi = "10.1109/IEDM19573.2019.8993581",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

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AU - Lee, M. H.

AU - Lin, Y. Y.

AU - Yang, Y. J.

AU - Hsieh, F. C.

AU - Chang, S. T.

AU - Liao, M. H.

AU - Li, K. S.

AU - Liu, C. W.

AU - Chen, K. T.

AU - Liao, C. Y.

AU - Siang, G. Y.

AU - Lo, C.

AU - Chen, H. Y.

AU - Tseng, Y. J.

AU - Chueh, C. Y.

AU - Chang, C.

PY - 2019/12

Y1 - 2019/12

N2 - Being the first demonstration of quasi-antiferroelertic Hf1-xZrxO2 (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SSfor=51mV/dec, SSrev=53mV/dec, ΔVT<1mV) for low onset voltage and high speed response, both forward backward (reverse) sweep exhibit obvious N-DIBL and NDR of QAFE-HZO to confirm NC effect. There is an operation window for steep SS without hysteresis for QAFE-HZO as compared with accompanying a non-negligible hysteresis FE-HZO (Zr=50%). The QAFE-HZO is also serviceable for both n-type and p-type channel FETs. The voltage transient response presents NC time 48%-77% improvement and VFE overlap of negative dQ/dVFE for forward and reverse, indicating non-hysteretic QAFE-HZO.

AB - Being the first demonstration of quasi-antiferroelertic Hf1-xZrxO2 (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SSfor=51mV/dec, SSrev=53mV/dec, ΔVT<1mV) for low onset voltage and high speed response, both forward backward (reverse) sweep exhibit obvious N-DIBL and NDR of QAFE-HZO to confirm NC effect. There is an operation window for steep SS without hysteresis for QAFE-HZO as compared with accompanying a non-negligible hysteresis FE-HZO (Zr=50%). The QAFE-HZO is also serviceable for both n-type and p-type channel FETs. The voltage transient response presents NC time 48%-77% improvement and VFE overlap of negative dQ/dVFE for forward and reverse, indicating non-hysteretic QAFE-HZO.

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