Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs

M. H. Lee, Y. Y. Lin, Y. J. Yang, F. C. Hsieh, S. T. Chang, M. H. Liao, K. S. Li, C. W. Liu, K. T. Chen, C. Y. Liao, G. Y. Siang, C. Lo, H. Y. Chen, Y. J. Tseng, C. Y. Chueh, C. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Being the first demonstration of quasi-antiferroelertic Hf1-xZrxO2 (QAFE-HZO, Zr=75%) negative-capacitance (NC) FET with non-hysteretic bi-directional sub-60mV/dec (SSfor=51mV/dec, SSrev=53mV/dec, ΔVT<1mV) for low onset voltage and high speed response, both forward backward (reverse) sweep exhibit obvious N-DIBL and NDR of QAFE-HZO to confirm NC effect. There is an operation window for steep SS without hysteresis for QAFE-HZO as compared with accompanying a non-negligible hysteresis FE-HZO (Zr=50%). The QAFE-HZO is also serviceable for both n-type and p-type channel FETs. The voltage transient response presents NC time 48%-77% improvement and VFE overlap of negative dQ/dVFE for forward and reverse, indicating non-hysteretic QAFE-HZO.

Original languageEnglish
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728140315
DOIs
Publication statusPublished - 2019 Dec
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: 2019 Dec 72019 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2019-December
ISSN (Print)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
CountryUnited States
CitySan Francisco
Period19/12/719/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Negative Capacitance FETs'. Together they form a unique fingerprint.

  • Cite this

    Lee, M. H., Lin, Y. Y., Yang, Y. J., Hsieh, F. C., Chang, S. T., Liao, M. H., Li, K. S., Liu, C. W., Chen, K. T., Liao, C. Y., Siang, G. Y., Lo, C., Chen, H. Y., Tseng, Y. J., Chueh, C. Y., & Chang, C. (2019). Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25Zr0.75O2 Negative Capacitance FETs. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 [8993581] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993581