Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory

Meng Yi Wu; Sheng Huei Dai; Kung Hong Lee; Shu Fen Hu; Ya Chin King

doi:10.1016/j.sse.2005.12.022

Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory

Meng Yi Wu^*
, Sheng Huei Dai
, Kung Hong Lee
, Shu Fen Hu
, Ya Chin King

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel FN ejection erasure, the cell guarantees fast random access capability. The BBISHE programming flash memory features high programming efficiency, low voltage operation, high-speed and reliability up to 10⁴ P/E cycles.

Original language	English
Pages (from-to)	309-315
Number of pages	7
Journal	Solid-State Electronics
Volume	50
Issue number	3
DOIs	https://doi.org/10.1016/j.sse.2005.12.022
Publication status	Published - 2006 Mar
Externally published	Yes

Keywords

Band-to-band tunneling induced substrate hot electron injection (BBISHE)
Flash memory
NOR memory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2005.12.022

Cite this

@article{3236760f99824f79a016d15bdef51457,

title = "Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory",

abstract = "A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel FN ejection erasure, the cell guarantees fast random access capability. The BBISHE programming flash memory features high programming efficiency, low voltage operation, high-speed and reliability up to 104 P/E cycles.",

keywords = "Band-to-band tunneling induced substrate hot electron injection (BBISHE), Flash memory, NOR memory",

author = "Wu, \{Meng Yi\} and Dai, \{Sheng Huei\} and Lee, \{Kung Hong\} and Hu, \{Shu Fen\} and King, \{Ya Chin\}",

note = "Funding Information: The authors would like to thank the engineers at the VLSI facilities of the Department of Electrical Engineering, National Nano Device Laboratory (NDL) for their help on tesk key preparation and National Science Council (NSC) for funding this project. ",

year = "2006",

month = mar,

doi = "10.1016/j.sse.2005.12.022",

language = "English",

volume = "50",

pages = "309--315",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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T1 - Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory

AU - Wu, Meng Yi

AU - Dai, Sheng Huei

AU - Lee, Kung Hong

AU - Hu, Shu Fen

AU - King, Ya Chin

N1 - Funding Information: The authors would like to thank the engineers at the VLSI facilities of the Department of Electrical Engineering, National Nano Device Laboratory (NDL) for their help on tesk key preparation and National Science Council (NSC) for funding this project.

PY - 2006/3

Y1 - 2006/3

N2 - A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel FN ejection erasure, the cell guarantees fast random access capability. The BBISHE programming flash memory features high programming efficiency, low voltage operation, high-speed and reliability up to 104 P/E cycles.

AB - A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel FN ejection erasure, the cell guarantees fast random access capability. The BBISHE programming flash memory features high programming efficiency, low voltage operation, high-speed and reliability up to 104 P/E cycles.

KW - Band-to-band tunneling induced substrate hot electron injection (BBISHE)

KW - Flash memory

KW - NOR memory

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U2 - 10.1016/j.sse.2005.12.022

DO - 10.1016/j.sse.2005.12.022

M3 - Article

AN - SCOPUS:33646105626

SN - 0038-1101

VL - 50

SP - 309

EP - 315

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory

Abstract

Keywords

ASJC Scopus subject areas

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