Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory

Meng Yi Wu, Sheng Huei Dai, Kung Hong Lee, Shu-Fen Hu, Ya Chin King

Research output: Contribution to journalArticle

Abstract

A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel FN ejection erasure, the cell guarantees fast random access capability. The BBISHE programming flash memory features high programming efficiency, low voltage operation, high-speed and reliability up to 104 P/E cycles.

Original languageEnglish
Pages (from-to)309-315
Number of pages7
JournalSolid-State Electronics
Volume50
Issue number3
DOIs
Publication statusPublished - 2006 Mar 1

Fingerprint

Electron injection
Flash memory
Hot electrons
programming
hot electrons
flash
injection
Substrates
random access
ejection
low voltage
high speed
Electric potential
cycles
cells

Keywords

  • Band-to-band tunneling induced substrate hot electron injection (BBISHE)
  • Flash memory
  • NOR memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory. / Wu, Meng Yi; Dai, Sheng Huei; Lee, Kung Hong; Hu, Shu-Fen; King, Ya Chin.

In: Solid-State Electronics, Vol. 50, No. 3, 01.03.2006, p. 309-315.

Research output: Contribution to journalArticle

Wu, Meng Yi ; Dai, Sheng Huei ; Lee, Kung Hong ; Hu, Shu-Fen ; King, Ya Chin. / Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory. In: Solid-State Electronics. 2006 ; Vol. 50, No. 3. pp. 309-315.
@article{062e6c1130c6497eab39a04d93ff0fe5,
title = "Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory",
abstract = "A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel FN ejection erasure, the cell guarantees fast random access capability. The BBISHE programming flash memory features high programming efficiency, low voltage operation, high-speed and reliability up to 104 P/E cycles.",
keywords = "Band-to-band tunneling induced substrate hot electron injection (BBISHE), Flash memory, NOR memory",
author = "Wu, {Meng Yi} and Dai, {Sheng Huei} and Lee, {Kung Hong} and Shu-Fen Hu and King, {Ya Chin}",
year = "2006",
month = "3",
day = "1",
doi = "10.1016/j.sse.2005.12.022",
language = "English",
volume = "50",
pages = "309--315",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "3",

}

TY - JOUR

T1 - Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory

AU - Wu, Meng Yi

AU - Dai, Sheng Huei

AU - Lee, Kung Hong

AU - Hu, Shu-Fen

AU - King, Ya Chin

PY - 2006/3/1

Y1 - 2006/3/1

N2 - A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel FN ejection erasure, the cell guarantees fast random access capability. The BBISHE programming flash memory features high programming efficiency, low voltage operation, high-speed and reliability up to 104 P/E cycles.

AB - A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel FN ejection erasure, the cell guarantees fast random access capability. The BBISHE programming flash memory features high programming efficiency, low voltage operation, high-speed and reliability up to 104 P/E cycles.

KW - Band-to-band tunneling induced substrate hot electron injection (BBISHE)

KW - Flash memory

KW - NOR memory

UR - http://www.scopus.com/inward/record.url?scp=33646105626&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646105626&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2005.12.022

DO - 10.1016/j.sse.2005.12.022

M3 - Article

AN - SCOPUS:33646105626

VL - 50

SP - 309

EP - 315

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 3

ER -