Band-to-band tunneling induced substrate hot electron injection (BBISHE) to perform programming for NOR flash memory

Meng Yi Wu, Sheng Huei Dai, Kung Hong Lee, Shu-Fen Hu, Ya Chin King

Research output: Contribution to journalArticle

Abstract

A new proposed flash memory with divided p-substrate-line (PBL) in modified NOR-type array is described. The programming method of band-to-band tunneling induced substrate hot electron injection (BBISHE) provides high programming efficiency. Realized in NOR-type array and combining with the channel FN ejection erasure, the cell guarantees fast random access capability. The BBISHE programming flash memory features high programming efficiency, low voltage operation, high-speed and reliability up to 104 P/E cycles.

Original languageEnglish
Pages (from-to)309-315
Number of pages7
JournalSolid-State Electronics
Volume50
Issue number3
DOIs
Publication statusPublished - 2006 Mar 1

    Fingerprint

Keywords

  • Band-to-band tunneling induced substrate hot electron injection (BBISHE)
  • Flash memory
  • NOR memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this