Band gap reduction in InAsN alloys

Ding Kang Shih, Hao Hsiung Lin, Li W. Sung, Tso Y. Chu, T. R. Yang

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates using plasma-assisted gas-source molecular beam epitaxy. From absorption measurements, it is found that the fundamental absorption energy of InAsN is higher than that of InAs due to the Burstein-Moss effect resulting from the high residual carrier concentration in InAsN. To deduce the 'real' band-gap energy of InAsN samples, the energy shift due to the Burstein-Moss effect and the band-gap narrowing effect are calculated by using a self-consistent approach based on the band-anticrossing (BAC) model [Shan et al.: Phys. Rev. Lett. 82 (1999) 1221]. After correction, the 'real' band-gap energy of InAsN samples decreases as N increases. The electron effective mass of InAsN is also investigated by plasma-edge measurement. We found a sizeable increase of the electron effective mass in these InAsN alloys, which is consistent with the theoretical predictions based on the BAC model.

Original languageEnglish
Pages (from-to)375-383
Number of pages9
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number2 A
Publication statusPublished - 2003 Feb

Fingerprint

Energy gap
Bryophytes
Gas source molecular beam epitaxy
Plasmas
Electrons
Carrier concentration
Structural properties
Electric properties
Optical properties
Nitrogen
energy absorption
Substrates
electrons
molecular beam epitaxy
electrical properties
optical properties
nitrogen
shift
predictions
gases

Keywords

  • Burstein-Moss effect
  • Effective mass
  • Gas source MBE
  • InAsN
  • Infrared reflectivity
  • Localized state
  • Nitride

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Band gap reduction in InAsN alloys. / Shih, Ding Kang; Lin, Hao Hsiung; Sung, Li W.; Chu, Tso Y.; Yang, T. R.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 2 A, 02.2003, p. 375-383.

Research output: Contribution to journalArticle

Shih, Ding Kang ; Lin, Hao Hsiung ; Sung, Li W. ; Chu, Tso Y. ; Yang, T. R. / Band gap reduction in InAsN alloys. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 2 A. pp. 375-383.
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