Band gap reduction in InAsN alloys

Ding Kang Shih, Hao Hsiung Lin, Li W. Sung, Tso Y. Chu, T. R. Yang

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Abstract

We report the structural, electrical and optical properties of bulk InAsN alloy with various nitrogen contents deposited on (100) InP substrates using plasma-assisted gas-source molecular beam epitaxy. From absorption measurements, it is found that the fundamental absorption energy of InAsN is higher than that of InAs due to the Burstein-Moss effect resulting from the high residual carrier concentration in InAsN. To deduce the 'real' band-gap energy of InAsN samples, the energy shift due to the Burstein-Moss effect and the band-gap narrowing effect are calculated by using a self-consistent approach based on the band-anticrossing (BAC) model [Shan et al.: Phys. Rev. Lett. 82 (1999) 1221]. After correction, the 'real' band-gap energy of InAsN samples decreases as N increases. The electron effective mass of InAsN is also investigated by plasma-edge measurement. We found a sizeable increase of the electron effective mass in these InAsN alloys, which is consistent with the theoretical predictions based on the BAC model.

Original languageEnglish
Pages (from-to)375-383
Number of pages9
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number2 A
Publication statusPublished - 2003 Feb

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Keywords

  • Burstein-Moss effect
  • Effective mass
  • Gas source MBE
  • InAsN
  • Infrared reflectivity
  • Localized state
  • Nitride

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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