Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Bo Chao Huang; Pu Yu; Y. H. Chu; Chia Seng Chang; Ramamoorthy Ramesh; Rafal E. Dunin-Borkowski; Philipp Ebert; Ya Ping Chiu

doi:10.1021/acsnano.7b06004

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Bo Chao Huang, Pu Yu^*, Y. H. Chu, Chia Seng Chang, Ramamoorthy Ramesh, Rafal E. Dunin-Borkowski, Philipp Ebert, Ya Ping Chiu

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO₃/La_0.7Sr_0.3MnO₃ interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.

Original language	English
Pages (from-to)	1089-1095
Number of pages	7
Journal	ACS Nano
Volume	12
Issue number	2
DOIs	https://doi.org/10.1021/acsnano.7b06004
Publication status	Published - 2018 Feb 27

Keywords

BiFeO
LaSrMnO
atomically resolved electronic states
complex oxide heterointerfaces
cross-sectional scanning tunneling microscopy

ASJC Scopus subject areas

General Materials Science
General Engineering
General Physics and Astronomy

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10.1021/acsnano.7b06004

Cite this

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title = "Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces",

abstract = "We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.",

keywords = "BiFeO, LaSrMnO, atomically resolved electronic states, complex oxide heterointerfaces, cross-sectional scanning tunneling microscopy",

author = "Huang, {Bo Chao} and Pu Yu and Chu, {Y. H.} and Chang, {Chia Seng} and Ramamoorthy Ramesh and Dunin-Borkowski, {Rafal E.} and Philipp Ebert and Chiu, {Ya Ping}",

note = "Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

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doi = "10.1021/acsnano.7b06004",

language = "English",

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T1 - Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

AU - Huang, Bo Chao

AU - Yu, Pu

AU - Chu, Y. H.

AU - Chang, Chia Seng

AU - Ramesh, Ramamoorthy

AU - Dunin-Borkowski, Rafal E.

AU - Ebert, Philipp

AU - Chiu, Ya Ping

PY - 2018/2/27

Y1 - 2018/2/27

N2 - We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.

AB - We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.

KW - BiFeO

KW - LaSrMnO

KW - atomically resolved electronic states

KW - complex oxide heterointerfaces

KW - cross-sectional scanning tunneling microscopy

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M3 - Article

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JO - ACS Nano

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Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Abstract

Keywords

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