Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Bo Chao Huang, Pu Yu, Y. H. Chu, Chia Seng Chang, Ramamoorthy Ramesh, Rafal E. Dunin-Borkowski, Philipp Ebert, Ya Ping Chiu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.

Original languageEnglish
Pages (from-to)1089-1095
Number of pages7
JournalACS Nano
Volume12
Issue number2
DOIs
Publication statusPublished - 2018 Feb 27

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Keywords

  • BiFeO
  • LaSrMnO
  • atomically resolved electronic states
  • complex oxide heterointerfaces
  • cross-sectional scanning tunneling microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Huang, B. C., Yu, P., Chu, Y. H., Chang, C. S., Ramesh, R., Dunin-Borkowski, R. E., Ebert, P., & Chiu, Y. P. (2018). Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces. ACS Nano, 12(2), 1089-1095. https://doi.org/10.1021/acsnano.7b06004