Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Bo Chao Huang, Pu Yu, Y. H. Chu, Chia Seng Chang, Ramamoorthy Ramesh, Rafal E. Dunin-Borkowski, Philipp Ebert, Ya Ping Chiu

Research output: Contribution to journalArticle

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Abstract

We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.

LanguageEnglish
Pages1089-1095
Number of pages7
JournalACS Nano
Volume12
Issue number2
DOIs
Publication statusPublished - 2018 Feb 27

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Interface states
Electronic states
Scanning tunneling microscopy
Oxides
Ferroelectric materials
Energy gap
oxides
electronics
scanning tunneling microscopy
engineering

Keywords

  • atomically resolved electronic states
  • BiFeO
  • complex oxide heterointerfaces
  • cross-sectional scanning tunneling microscopy
  • LaSrMnO

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces. / Huang, Bo Chao; Yu, Pu; Chu, Y. H.; Chang, Chia Seng; Ramesh, Ramamoorthy; Dunin-Borkowski, Rafal E.; Ebert, Philipp; Chiu, Ya Ping.

In: ACS Nano, Vol. 12, No. 2, 27.02.2018, p. 1089-1095.

Research output: Contribution to journalArticle

Huang, Bo Chao ; Yu, Pu ; Chu, Y. H. ; Chang, Chia Seng ; Ramesh, Ramamoorthy ; Dunin-Borkowski, Rafal E. ; Ebert, Philipp ; Chiu, Ya Ping. / Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces. In: ACS Nano. 2018 ; Vol. 12, No. 2. pp. 1089-1095.
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