Abstract
Direct evidence of the electronic configurations across domain walls in BiFeO3 is quantitatively characterized by cross-sectional scanning tunneling microscopy. Atomic-scale band evolution and the asymmetrically built-in potential barrier at domain boundaries are demonstrated. The 109° domain walls register a remarkable decrease in the bandgap, suggesting a new route to control the local conducting channels within 2 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 1530-1534 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 23 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2011 Apr 5 |
| Externally published | Yes |
Keywords
- BiFeO
- domain walls
- electronic structure
- polarization discontinuity
- scanning tunneling microscopy (STM)
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering