Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

Y. P. Chiu; B. C. Huang; M. C. Shih; J. Y. Shen; P. Chang; C. S. Chang; M. L. Huang; M. H. Tsai; M. Hong; J. Kwo

doi:10.1063/1.3663628

Atomic-scale determination of band offsets at the Gd₂O ₃/GaAs (100) hetero-interface using scanning tunneling spectroscopy

Y. P. Chiu^*, B. C. Huang, M. C. Shih, J. Y. Shen, P. Chang, C. S. Chang, M. L. Huang, M. H. Tsai, M. Hong, J. Kwo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Direct measurements of band profile and band offsets across the Gd ₂O₃/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd ₂O₃ gate dielectric.

Original language	English
Article number	212101
Journal	Applied Physics Letters
Volume	99
Issue number	21
DOIs	https://doi.org/10.1063/1.3663628
Publication status	Published - 2011 Nov 21
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3663628

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@article{c4959b12391d4cf7a6f38b6ccc1a2640,

title = "Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy",

abstract = "Direct measurements of band profile and band offsets across the Gd 2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd 2O3 gate dielectric.",

author = "Chiu, {Y. P.} and Huang, {B. C.} and Shih, {M. C.} and Shen, {J. Y.} and P. Chang and Chang, {C. S.} and Huang, {M. L.} and Tsai, {M. H.} and M. Hong and J. Kwo",

note = "Funding Information: The authors wish to thank National Science Council, Taiwan, under grants of NSC 98-2112 -M-110-005-MY3, 98-2120 -M-007-002, and 96-2628 -M-007-003-MY3, Intel, the Asian Office of Aerospace Research, and Development of the U.S. Air Force for supporting this work. The authors thank Dr. Woei Wu Pai for his valuable comments. We also thank Professor Li-Wei Tu, T. H. Chen, W. C. Lee, T. H. Chiang, and P. C. Huang for their technical supports. ",

year = "2011",

month = nov,

day = "21",

doi = "10.1063/1.3663628",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

AU - Chiu, Y. P.

AU - Huang, B. C.

AU - Shih, M. C.

AU - Shen, J. Y.

AU - Chang, P.

AU - Chang, C. S.

AU - Huang, M. L.

AU - Tsai, M. H.

AU - Hong, M.

AU - Kwo, J.

N1 - Funding Information: The authors wish to thank National Science Council, Taiwan, under grants of NSC 98-2112 -M-110-005-MY3, 98-2120 -M-007-002, and 96-2628 -M-007-003-MY3, Intel, the Asian Office of Aerospace Research, and Development of the U.S. Air Force for supporting this work. The authors thank Dr. Woei Wu Pai for his valuable comments. We also thank Professor Li-Wei Tu, T. H. Chen, W. C. Lee, T. H. Chiang, and P. C. Huang for their technical supports.

PY - 2011/11/21

Y1 - 2011/11/21

N2 - Direct measurements of band profile and band offsets across the Gd 2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd 2O3 gate dielectric.

AB - Direct measurements of band profile and band offsets across the Gd 2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd 2O3 gate dielectric.

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JF - Applied Physics Letters

IS - 21

M1 - 212101

ER -

Atomic-scale determination of band offsets at the Gd₂O ₃/GaAs (100) hetero-interface using scanning tunneling spectroscopy

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