Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

Y. P. Chiu, B. C. Huang, M. C. Shih, J. Y. Shen, P. Chang, C. S. Chang, M. L. Huang, M. H. Tsai, M. Hong, J. Kwo

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Direct measurements of band profile and band offsets across the Gd 2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd 2O3 gate dielectric.

Original languageEnglish
Article number212101
JournalApplied Physics Letters
Volume99
Issue number21
DOIs
Publication statusPublished - 2011 Nov 21
Externally publishedYes

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scanning
spectroscopy
scanning tunneling microscopy
transistors
alignment
electrostatics
valence
conduction
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy. / Chiu, Y. P.; Huang, B. C.; Shih, M. C.; Shen, J. Y.; Chang, P.; Chang, C. S.; Huang, M. L.; Tsai, M. H.; Hong, M.; Kwo, J.

In: Applied Physics Letters, Vol. 99, No. 21, 212101, 21.11.2011.

Research output: Contribution to journalArticle

Chiu, YP, Huang, BC, Shih, MC, Shen, JY, Chang, P, Chang, CS, Huang, ML, Tsai, MH, Hong, M & Kwo, J 2011, 'Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy', Applied Physics Letters, vol. 99, no. 21, 212101. https://doi.org/10.1063/1.3663628
Chiu, Y. P. ; Huang, B. C. ; Shih, M. C. ; Shen, J. Y. ; Chang, P. ; Chang, C. S. ; Huang, M. L. ; Tsai, M. H. ; Hong, M. ; Kwo, J. / Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy. In: Applied Physics Letters. 2011 ; Vol. 99, No. 21.
@article{6b1ed0e3fdbb4addac53f56c49ea849b,
title = "Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy",
abstract = "Direct measurements of band profile and band offsets across the Gd 2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd 2O3 gate dielectric.",
author = "Chiu, {Y. P.} and Huang, {B. C.} and Shih, {M. C.} and Shen, {J. Y.} and P. Chang and Chang, {C. S.} and Huang, {M. L.} and Tsai, {M. H.} and M. Hong and J. Kwo",
year = "2011",
month = "11",
day = "21",
doi = "10.1063/1.3663628",
language = "English",
volume = "99",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

TY - JOUR

T1 - Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

AU - Chiu, Y. P.

AU - Huang, B. C.

AU - Shih, M. C.

AU - Shen, J. Y.

AU - Chang, P.

AU - Chang, C. S.

AU - Huang, M. L.

AU - Tsai, M. H.

AU - Hong, M.

AU - Kwo, J.

PY - 2011/11/21

Y1 - 2011/11/21

N2 - Direct measurements of band profile and band offsets across the Gd 2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd 2O3 gate dielectric.

AB - Direct measurements of band profile and band offsets across the Gd 2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd 2O3 gate dielectric.

UR - http://www.scopus.com/inward/record.url?scp=81855228018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81855228018&partnerID=8YFLogxK

U2 - 10.1063/1.3663628

DO - 10.1063/1.3663628

M3 - Article

AN - SCOPUS:81855228018

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 212101

ER -