Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy

Y. P. Chiu, B. C. Huang, M. C. Shih, J. Y. Shen, P. Chang, C. S. Chang, M. L. Huang, M. H. Tsai, M. Hong, J. Kwo

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Abstract

Direct measurements of band profile and band offsets across the Gd 2O3/GaAs(100) hetero-interface have been performed using cross-sectional scanning tunneling microscopy and spectroscopy. The spatial variation of the local density of states with atomic precision revealed the interfacial band alignment in this model high-/III-V system. In conjunction with the theoretical modeling, the band offsets for both conduction and valence states are identified, revealing critical information about the electrostatic potential landscape of the GaAs semiconductor transistor with a Gd 2O3 gate dielectric.

Original languageEnglish
Article number212101
JournalApplied Physics Letters
Volume99
Issue number21
DOIs
Publication statusPublished - 2011 Nov 21
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Chiu, Y. P., Huang, B. C., Shih, M. C., Shen, J. Y., Chang, P., Chang, C. S., Huang, M. L., Tsai, M. H., Hong, M., & Kwo, J. (2011). Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy. Applied Physics Letters, 99(21), [212101]. https://doi.org/10.1063/1.3663628