Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

Che Yu Lin, Xiaodan Zhu, Shin Hung Tsai, Shiao Po Tsai, Sidong Lei, Yumeng Shi, Lain Jong Li, Shyh Jer Huang, Wen Fa Wu, Wen Kuan Yeh, Yan Kuin Su, Kang L. Wang, Yann Wen Lan

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.

Original languageEnglish
Pages (from-to)11015-11023
Number of pages9
JournalACS Nano
Volume11
Issue number11
DOIs
Publication statusPublished - 2017 Nov 28

Keywords

  • 2D materials
  • atomic layered
  • heterojunction bipolar transistors
  • lateral junction
  • resonant tunneling phenomenon

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Lin, C. Y., Zhu, X., Tsai, S. H., Tsai, S. P., Lei, S., Shi, Y., Li, L. J., Huang, S. J., Wu, W. F., Yeh, W. K., Su, Y. K., Wang, K. L., & Lan, Y. W. (2017). Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon. ACS Nano, 11(11), 11015-11023. https://doi.org/10.1021/acsnano.7b05012