An experiment was conducted to confirm the band-to-band tunneling (BTBT) in a novel vertical tunneling field-effect transistor with a monolayer MoS2 as the channel (MoS2-TFET). The application of either positive or negative local top-gate voltages leads to the formation of in-plane/lateral n?n or p?n junctions, respectively. Increasing the gate voltages results in a strong gate-induced doping of the monolayer MoS2 channel as well as the presence of large internal electric fields. Accordingly, this results in the direct manifestation of a BTBT current and an ambipolar transport in our MoS2-TFETs. The MoS2 was deposited using chemical vapor deposition, a potentially large-scale and practical fabrication technique. The experiment clearly demonstrates the feasibility of current switching via BTBT in a monolayer of MoS2, simultaneous improvements in the tunnel barrier profiles as well as the contact between van der Waals materials and metal electrodes can further increase the current densities. This will enable low-power electronic applications through their direct integration with commercial silicon-based CMOS technology for achieving augmented functionalities.
- 2D materials
- band-to-band tunneling
- transition metal dichalcogenides
- tunneling field effect transistors
ASJC Scopus subject areas
- Materials Science(all)