@article{63c7515e5e294807ad258a05cafb10aa,
title = "Atomic Layer Deposition Plasma-Based Undoped-HfO2Ferroelectric FETs for Non-Volatile Memory",
abstract = "A plasma-based undoped-HfO2 FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated. Modifying the O2 plasma period in plasma-enhanced atomic layer deposition (PE-ALD) is an effective approach to enhance the remnant polarization ( \text{P} {\text {r}} ) up to 2P {\text {r}} = 25\,\,\mu \text{C} /cm2 for the MFM (metal/ferroelectric/metal) structure with ferroelectric undoped-HfO2 thin films, and successful integration is implemented for the FeFET. The appropriate O2 vacancies ( \text{V} {\text {o} {{2}+} ) benefit the formation of the ferroelectric phase since they play the role of dopants and help orthorhombic phase (o-phase) formation during post-metal annealing (PMA). The \text{V} {\text {o}} {{2}+} -rich undoped-HfO2 FeFET exhibits a memory window (MW) of 0.5 V, {5} \times {10} {{4}} switching endurance cycles, and higher than 10 {{4}} sec of data retention with \text{V} {\text {P/E}} = \pm 5 V.",
keywords = "FeFET, Undoped-Hfo, endurance, retention",
author = "Luo, {Jun Dao} and Lai, {Yu Ying} and Hsiang, {Kuo Yu} and Wu, {Chia Feng} and Chung, {Hao Tung} and Li, {Wei Shuo} and Liao, {Chun Yu} and Chen, {Pin Guang} and Chen, {Kuan Neng} and Lee, {Min Hung} and Cheng, {Huang Chung}",
note = "Funding Information: Manuscript received June 2, 2021; accepted June 21, 2021. Date of publication June 28, 2021; date of current version July 26, 2021. This work was supported in part by the Center for the Semiconductor Technology Research through the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan; in part by the Ministry of Science and Technology, Taiwan, under Grant MOST 110-2634-F-009-027-, Grant 110-2218-E-A49-014-MBK, Grant 110-2218-E-003-005, and Grant 109-2622-8-002-003; in part by the Taiwan Semiconductor Research Institute (TSRI); and in part by the Nano Facility Center (NFC), Taiwan. The review of this letter was arranged by Editor U. Schroeder. (Corresponding authors: Jun-Dao Luo; Min-Hung Lee.) Jun-Dao Luo, Yu-Ying Lai, Kuo-Yu Hsiang, Chia-Feng Wu, Hao-Tung Chung, Wei-Shuo Li, Kuan-Neng Chen, and Huang-Chung Cheng are with the Department of Electronics Engineering, Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan (e-mail: dylan2149@gmail.com). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2021",
month = aug,
doi = "10.1109/LED.2021.3092787",
language = "English",
volume = "42",
pages = "1152--1155",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",
}