INIS
applications
33%
binding energy
33%
design
33%
devices
33%
ellipsometry
100%
energy
66%
energy range
33%
energy-level transitions
33%
excitons
66%
fabrication
33%
hysteresis
33%
information
33%
lead halides
66%
optical properties
100%
optics
33%
optoelectronic devices
33%
peaks
33%
perovskite
33%
perovskites
33%
phase transformations
100%
refractive index
33%
semiconductor materials
33%
single crystals
100%
solar cells
33%
temperature dependence
33%
temperature range 0273-0400 k
33%
Chemistry
Ambient Reaction Temperature
33%
Application
33%
Band Gap
33%
Binding Energy
33%
Ellipsometry
100%
Energy
100%
Halide
66%
Interband Transition
33%
Optical Property
100%
Optoelectronics
33%
Perovskite
66%
Reaction Temperature
100%
Refractive Index
33%
Semiconductor
33%
Single Crystalline Solid
100%
Solar Cell
33%
Structural Phase Transition
100%
Material Science
Characterization
25%
Devices
50%
Halide
50%
Material
25%
Optical Property
100%
Optoelectronics
25%
Refractive Index
25%
Semiconductor Material
25%
Single Crystal
100%
Solar Cell
25%
Temperature
100%
Engineering
Extinction Coefficient
33%
Fundamental Band Gap
33%
Optic Coefficient
33%
Technological Possibility
33%