Array of CdSe QD-sensitized ZnO nanorods serves as photoanode for water splitting

N. Chouhan; C. L. Yeh; S. F. Hu; J. H. Huang; C. W. Tsai; R. S. Liu; W. S. Chang; K. H. Chen

doi:10.1149/1.3473788

Array of CdSe QD-sensitized ZnO nanorods serves as photoanode for water splitting

N. Chouhan^*, C. L. Yeh, S. F. Hu, J. H. Huang, C. W. Tsai, R. S. Liu, W. S. Chang, K. H. Chen

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Aqueous chemically grown ZnO nanorods (NRs) arrays were sensitized by CdSe quantum dots (QDs) and were investigated as photoanode for photoelectrochemical water splitting under visible light (>420 nm) illumination. Significant enhancement of the factors 1.6 and 6 was observed for CdSe (QD)-sensitized nonannealed and annealed samples of ZnO NRs over pristine ZnO NRs arrays, respectively. The highest photocurrent density of 2.48 mA/ cm² was registered for the annealed CdSe (QD)/ZnO (NR) arrays films at zero applied voltage and 100 mW/ cm² (AM 1.5 G, Air Mass 1.5 Global) power density and their corresponding photocurrent density for pristine ZnO NR array was recorded as 0.41 mA/ cm².

Original language	English
Pages (from-to)	B1430-B1433
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	10
DOIs	https://doi.org/10.1149/1.3473788
Publication status	Published - 2010

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.3473788

Cite this

@article{c3ac427659244b47b807fb0187afc7f4,

title = "Array of CdSe QD-sensitized ZnO nanorods serves as photoanode for water splitting",

abstract = "Aqueous chemically grown ZnO nanorods (NRs) arrays were sensitized by CdSe quantum dots (QDs) and were investigated as photoanode for photoelectrochemical water splitting under visible light (>420 nm) illumination. Significant enhancement of the factors 1.6 and 6 was observed for CdSe (QD)-sensitized nonannealed and annealed samples of ZnO NRs over pristine ZnO NRs arrays, respectively. The highest photocurrent density of 2.48 mA/ cm2 was registered for the annealed CdSe (QD)/ZnO (NR) arrays films at zero applied voltage and 100 mW/ cm2 (AM 1.5 G, Air Mass 1.5 Global) power density and their corresponding photocurrent density for pristine ZnO NR array was recorded as 0.41 mA/ cm2.",

author = "N. Chouhan and Yeh, {C. L.} and Hu, {S. F.} and Huang, {J. H.} and Tsai, {C. W.} and Liu, {R. S.} and Chang, {W. S.} and Chen, {K. H.}",

year = "2010",

doi = "10.1149/1.3473788",

language = "English",

volume = "157",

pages = "B1430--B1433",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "10",

}

TY - JOUR

T1 - Array of CdSe QD-sensitized ZnO nanorods serves as photoanode for water splitting

AU - Chouhan, N.

AU - Yeh, C. L.

AU - Hu, S. F.

AU - Huang, J. H.

AU - Tsai, C. W.

AU - Liu, R. S.

AU - Chang, W. S.

AU - Chen, K. H.

PY - 2010

Y1 - 2010

N2 - Aqueous chemically grown ZnO nanorods (NRs) arrays were sensitized by CdSe quantum dots (QDs) and were investigated as photoanode for photoelectrochemical water splitting under visible light (>420 nm) illumination. Significant enhancement of the factors 1.6 and 6 was observed for CdSe (QD)-sensitized nonannealed and annealed samples of ZnO NRs over pristine ZnO NRs arrays, respectively. The highest photocurrent density of 2.48 mA/ cm2 was registered for the annealed CdSe (QD)/ZnO (NR) arrays films at zero applied voltage and 100 mW/ cm2 (AM 1.5 G, Air Mass 1.5 Global) power density and their corresponding photocurrent density for pristine ZnO NR array was recorded as 0.41 mA/ cm2.

AB - Aqueous chemically grown ZnO nanorods (NRs) arrays were sensitized by CdSe quantum dots (QDs) and were investigated as photoanode for photoelectrochemical water splitting under visible light (>420 nm) illumination. Significant enhancement of the factors 1.6 and 6 was observed for CdSe (QD)-sensitized nonannealed and annealed samples of ZnO NRs over pristine ZnO NRs arrays, respectively. The highest photocurrent density of 2.48 mA/ cm2 was registered for the annealed CdSe (QD)/ZnO (NR) arrays films at zero applied voltage and 100 mW/ cm2 (AM 1.5 G, Air Mass 1.5 Global) power density and their corresponding photocurrent density for pristine ZnO NR array was recorded as 0.41 mA/ cm2.

UR - http://www.scopus.com/inward/record.url?scp=77956216565&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956216565&partnerID=8YFLogxK

U2 - 10.1149/1.3473788

DO - 10.1149/1.3473788

M3 - Article

AN - SCOPUS:77956216565

SN - 0013-4651

VL - 157

SP - B1430-B1433

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 10

ER -

Array of CdSe QD-sensitized ZnO nanorods serves as photoanode for water splitting

Abstract

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this