Area-efficient and low-leakage diode string for On-Chip ESD protection

Chun-Yu Lin, Po Han Wu, Ming Dou Ker

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Diode string was used as the effective on-chip electrostatic discharge (ESD) protection device. To reduce the leakage current and the layout area, an area-efficient and lowleakage diode string is proposed in this paper. The standard steps of P- implantation and silicide blocking in CMOS process are used in this design to realize the proposed diode string with stacked P-/N+ diodes. The test devices of the proposed design have successfully been verified in the silicon chip. With the high ESD robustness, low leakage current, and small layout area, the proposed diode string can be a better solution for on-chip ESD protection applications.

Original languageEnglish
Article number7353163
Pages (from-to)531-536
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume63
Issue number2
DOIs
Publication statusPublished - 2016 Feb 1

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Electrostatic discharge
Diodes
Leakage currents
Silicon

Keywords

  • Diode
  • Diode string
  • Electrostatic discharge (ESD)
  • Leakage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Area-efficient and low-leakage diode string for On-Chip ESD protection. / Lin, Chun-Yu; Wu, Po Han; Ker, Ming Dou.

In: IEEE Transactions on Electron Devices, Vol. 63, No. 2, 7353163, 01.02.2016, p. 531-536.

Research output: Contribution to journalArticle

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