Abstract
Orthorhombic HoMn O3 films with well-aligned crystallographic orientations were deposited on LaAl O3 (110) single crystal substrates by using pulsed laser deposition. The nearly perfect b -axis-oriented films provide the opportunity of investigating the orientation-dependent physical property of this material. The temperature dependent magnetization evidently displays an antiferromagnetic ordering near 42 K, irrespective to the direction of applied field. Furthermore, the theoretically expected lock-in transition was clearly observed at around 30 K when field was applied along the c axis and was undetectable along the a and b axes. The 30 K transition was suppressed to 26 K when the applied field increased from 100 to 500 Oe.
Original language | English |
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Article number | 132503 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 13 |
DOIs | |
Publication status | Published - 2008 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)