Anomalous Hall effect of Nd0.7Sr0.3MnO3 films with large magnetoresistance ratio: Evidence of Berry phase effect

H. C. Yang; L. M. Wang; H. E. Horng

Anomalous Hall effect of Nd_0.7Sr_0.3MnO₃ films with large magnetoresistance ratio: Evidence of Berry phase effect

H. C. Yang^*, L. M. Wang, H. E. Horng

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The transverse Hall resistivity, ρ_xy, and magnetization, M, of [110] and [100] oriented epitaxial Nd_0.7Sr_0.3MnO₃ films with large magnetoresistance were measured as a function of temperature and applied magnetic field to study the ordinary and spontaneous Hall coefficients. In the ferromagnetic regime, 100 K <T<200 K, (-R_s/R_o)×T was found to be proportional to exp(-E_c/k_BT), where R_s is the spontaneous Hall coefficient, R_o is the ordinary Hall coefficient, and E_c is the core energy of the magnetic dipole. In addition, R_s was found to be proportional to ρ_xx² in the low-temperature regime (T<160 K) where the ordinary Hall coefficient, R_o, is independent of temperature. A scaling behavior, R_s∝ρ_xx was observed at high temperatures (T>160 K). Hall effects of [110] and [100] oriented films are compared to each other. The results are discussed in terms of the exiting theories.

Original language	English
Article number	174415
Pages (from-to)	1744151-1744156
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	17
Publication status	Published - 2001 Nov 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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title = "Anomalous Hall effect of Nd0.7Sr0.3MnO3 films with large magnetoresistance ratio: Evidence of Berry phase effect",

abstract = "The transverse Hall resistivity, ρxy, and magnetization, M, of [110] and [100] oriented epitaxial Nd0.7Sr0.3MnO3 films with large magnetoresistance were measured as a function of temperature and applied magnetic field to study the ordinary and spontaneous Hall coefficients. In the ferromagnetic regime, 100 K <T<200 K, (-Rs/Ro)×T was found to be proportional to exp(-Ec/kBT), where Rs is the spontaneous Hall coefficient, Ro is the ordinary Hall coefficient, and Ec is the core energy of the magnetic dipole. In addition, Rs was found to be proportional to ρxx2 in the low-temperature regime (T<160 K) where the ordinary Hall coefficient, Ro, is independent of temperature. A scaling behavior, Rs∝ρxx was observed at high temperatures (T>160 K). Hall effects of [110] and [100] oriented films are compared to each other. The results are discussed in terms of the exiting theories.",

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T1 - Anomalous Hall effect of Nd0.7Sr0.3MnO3 films with large magnetoresistance ratio

T2 - Evidence of Berry phase effect

AU - Yang, H. C.

AU - Wang, L. M.

AU - Horng, H. E.

PY - 2001/11/1

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N2 - The transverse Hall resistivity, ρxy, and magnetization, M, of [110] and [100] oriented epitaxial Nd0.7Sr0.3MnO3 films with large magnetoresistance were measured as a function of temperature and applied magnetic field to study the ordinary and spontaneous Hall coefficients. In the ferromagnetic regime, 100 K <T<200 K, (-Rs/Ro)×T was found to be proportional to exp(-Ec/kBT), where Rs is the spontaneous Hall coefficient, Ro is the ordinary Hall coefficient, and Ec is the core energy of the magnetic dipole. In addition, Rs was found to be proportional to ρxx2 in the low-temperature regime (T<160 K) where the ordinary Hall coefficient, Ro, is independent of temperature. A scaling behavior, Rs∝ρxx was observed at high temperatures (T>160 K). Hall effects of [110] and [100] oriented films are compared to each other. The results are discussed in terms of the exiting theories.

AB - The transverse Hall resistivity, ρxy, and magnetization, M, of [110] and [100] oriented epitaxial Nd0.7Sr0.3MnO3 films with large magnetoresistance were measured as a function of temperature and applied magnetic field to study the ordinary and spontaneous Hall coefficients. In the ferromagnetic regime, 100 K <T<200 K, (-Rs/Ro)×T was found to be proportional to exp(-Ec/kBT), where Rs is the spontaneous Hall coefficient, Ro is the ordinary Hall coefficient, and Ec is the core energy of the magnetic dipole. In addition, Rs was found to be proportional to ρxx2 in the low-temperature regime (T<160 K) where the ordinary Hall coefficient, Ro, is independent of temperature. A scaling behavior, Rs∝ρxx was observed at high temperatures (T>160 K). Hall effects of [110] and [100] oriented films are compared to each other. The results are discussed in terms of the exiting theories.

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Anomalous Hall effect of Nd_0.7Sr_0.3MnO₃ films with large magnetoresistance ratio: Evidence of Berry phase effect

Abstract

ASJC Scopus subject areas

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