Anomalous Hall effect of Nd0.7Sr0.3MnO3 films with large magnetoresistance ratio: Evidence of Berry phase effect

Hong-Chang Yang, L. M. Wang, Herng-Er Horng

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    Abstract

    The transverse Hall resistivity, ρxy, and magnetization, M, of [110] and [100] oriented epitaxial Nd0.7Sr0.3MnO3 films with large magnetoresistance were measured as a function of temperature and applied magnetic field to study the ordinary and spontaneous Hall coefficients. In the ferromagnetic regime, 100 K <T<200 K, (-Rs/Ro)×T was found to be proportional to exp(-Ec/kBT), where Rs is the spontaneous Hall coefficient, Ro is the ordinary Hall coefficient, and Ec is the core energy of the magnetic dipole. In addition, Rs was found to be proportional to ρxx2 in the low-temperature regime (T<160 K) where the ordinary Hall coefficient, Ro, is independent of temperature. A scaling behavior, Rs∝ρxx was observed at high temperatures (T>160 K). Hall effects of [110] and [100] oriented films are compared to each other. The results are discussed in terms of the exiting theories.

    Original languageEnglish
    Article number174415
    Pages (from-to)1744151-1744156
    Number of pages6
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume64
    Issue number17
    Publication statusPublished - 2001 Nov 1

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    Epitaxial films
    Hall effect
    Magnetoresistance
    Magnetization
    Magnetic fields
    Temperature
    magnetization
    electrical resistivity
    magnetic fields
    temperature

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Anomalous Hall effect of Nd0.7Sr0.3MnO3 films with large magnetoresistance ratio : Evidence of Berry phase effect. / Yang, Hong-Chang; Wang, L. M.; Horng, Herng-Er.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 64, No. 17, 174415, 01.11.2001, p. 1744151-1744156.

    Research output: Contribution to journalArticle

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