Anomalous hall effect in Gd-implanted wurtzite AlxGa t-xN/GaN high electron mobility transistor structures

Fang Yuh Lo, Alexander Melnikov, Dirk Reuter, Yvon Cordier, Andreas D. Wieck

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by ammonia-source molecular beam epitaxy (MBE) are focused-ion-beam implanted with 300 keV Gd-ions at room temperature. The two-dimensional electron gas (2DEG) of these HEMT structures is located 27 nm underneath the sample surface. At 4.2 K, current-voltage characteristics across implanted rectangles show that the structures remain conducting up to a Gd-dose of 1×1012 cm-2. Anomalous Hall effect (AHE) is observed at T = 4.2 K for structures implanted with Gd, whose dose is 3×1011 cm-2. Measurements of AHE in the wide temperature range from 2.4 K to 300 K show that the magnetic ordering temperature of these structures is around 100 K. Therefore, these Gd-implanted HEMT structures containing the still conducting 2DEG. which is now embedded in a ferromagnetic semiconductor, open the possibility to polarize the electron spins.

Original languageEnglish
Pages (from-to)61-69
Number of pages9
JournalMaterials Research Society Symposium Proceedings
Volume1111
Publication statusPublished - 2009 Nov 26
Event2008 MRS Fall Meeting - Boston, MA, United States
Duration: 2008 Dec 12008 Dec 4

Fingerprint

Two dimensional electron gas
Hall effect
High electron mobility transistors
high electron mobility transistors
wurtzite
conduction
dosage
rectangles
Focused ion beams
Current voltage characteristics
Ammonia
Molecular beam epitaxy
electron spin
Temperature
electron gas
ammonia
Magnetization
molecular beam epitaxy
ion beams
Ions

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Anomalous hall effect in Gd-implanted wurtzite AlxGa t-xN/GaN high electron mobility transistor structures. / Lo, Fang Yuh; Melnikov, Alexander; Reuter, Dirk; Cordier, Yvon; Wieck, Andreas D.

In: Materials Research Society Symposium Proceedings, Vol. 1111, 26.11.2009, p. 61-69.

Research output: Contribution to journalConference article

Lo, Fang Yuh ; Melnikov, Alexander ; Reuter, Dirk ; Cordier, Yvon ; Wieck, Andreas D. / Anomalous hall effect in Gd-implanted wurtzite AlxGa t-xN/GaN high electron mobility transistor structures. In: Materials Research Society Symposium Proceedings. 2009 ; Vol. 1111. pp. 61-69.
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AU - Wieck, Andreas D.

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