INIS
annealing
100%
emission
14%
field emission
14%
films
100%
glass
100%
luminescence
14%
microstructure
100%
morphology
14%
oxides
14%
oxygen ions
14%
photoluminescence
14%
power
14%
purity
14%
quartz
100%
radiowave radiation
14%
resolution
14%
scanning electron microscopy
14%
silicon ions
14%
sputtering
28%
substrates
14%
surfaces
14%
thickness
28%
thin films
100%
transmission electron microscopy
28%
zinc ions
14%
zinc oxides
57%
Material Science
Annealing
50%
Characterization
100%
Film
100%
Glass
100%
Indium Ion
25%
Luminescence
25%
Microstructure
100%
Morphology
25%
Oxide Film
25%
Photoluminescence
25%
Silicon Ion
25%
Sputtered Film
25%
Surface
25%
Temperature
75%
Thin Films
100%
ZnO
100%
Physics
Act
25%
Annealing
50%
Annealing Effect
100%
Emission
25%
Field Emission
25%
Frequencies
25%
Glass
100%
High Resolution
25%
Ion
25%
Luminescence
25%
Oxygen Ion
25%
Photoluminescence
25%
Scanning Electron Microscopy
25%
Silicon
25%
Substrates
25%
Targets
25%
Temperature
75%
Thin Films
100%
Transmission Electron Microscopy
50%
ZnO
100%
Biochemistry, Genetics and Molecular Biology
Field Emission Scanning Electron Microscopy
33%
High-Resolution Transmission Electron Microscopy
33%
Luminescence
33%
Morphology
33%
Optics
100%
Photoluminescence
33%
Radiofrequency
33%
Scanning Transmission Electron Microscopy
33%
Surface Property
33%
Temperature
100%
Thickness
66%