Anisotropic impurity scattering effects on (formula presented) and (formula presented) in (formula presented)

J. Y. Lin, S. J. Chen, S. Y. Chen, C. F. Chang, H. D. Yang, S. K. Tolpygo, M. Gurvitch, Y. Y. Hsu, H. C. Ku

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We have studied the impurity effects on the superconducting transition temperature (Formula presented) and the upper critical field (Formula presented) in electron irradiated (Formula presented) with in-plane oxygen defects and (Formula presented) It is found that the effects of the same type of defects or impurities on (Formula presented) are the same regardless of the oxygen contents of the samples. Furthermore, (Formula presented) decreases slower in irradiated (Formula presented) than in (Formula presented) This may be well explained by the model that the scattering due to in-plane oxygen defects is more anisotropic than that due to Zn impurities. The different behavior of the reduced slopes (Formula presented) in these two types of samples can also be understood in this context.

Original languageEnglish
Pages (from-to)6047-6050
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number9
DOIs
Publication statusPublished - 1999 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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