Angular dependence of tunneling magnetoresistance in La 0.7Sr0.3MnO3 step-edge junctions

L. M. Wang, Jyh Yi Lee, H. C. Yang, J. C. Chen, Hsiang Lin Liu, Kun Sheng Lu, Lance Horng, H. E. Horng

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (0 0 1) SrTiO3 substrates with a high step-edge angle. In the measurement of magnetoresistance (MR) ratio versus external magnetic field H, butterfly-like MR curves are clearly observed. The MR(H) curves vary with θ, the angle between the applied magnetic field and the current direction in the substrate plane, showing anisotropic MR properties. A much broader MR(H) response is observed for the configuration of H perpendicular to the substrate plane. Additionally, the maxima-MR field Hp almost coincides with the coercive field Hc for θ<60° but obeys a different form from Hc(θ). The high-field junction resistance shows an intrinsic sin2θ angular dependence, while the low-field resistance shows an extrinsic cos(4θ) angular dependence. The distinctive features are mainly due to the induced magnetization anisotropy in the artificial steps of grain boundaries.

Original languageEnglish
Pages (from-to)48-55
Number of pages8
JournalJournal of Magnetism and Magnetic Materials
Volume298
Issue number1
DOIs
Publication statusPublished - 2006 Mar 1

Fingerprint

Tunnelling magnetoresistance
Magnetoresistance
curves
magnetic fields
Substrates
Enhanced magnetoresistance
Magnetic fields
grain boundaries
magnetization
anisotropy
configurations
Magnetization
Grain boundaries
Anisotropy

Keywords

  • Magnetic properties of thin films
  • Magnetic thin film devices
  • Tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Angular dependence of tunneling magnetoresistance in La 0.7Sr0.3MnO3 step-edge junctions. / Wang, L. M.; Lee, Jyh Yi; Yang, H. C.; Chen, J. C.; Liu, Hsiang Lin; Lu, Kun Sheng; Horng, Lance; Horng, H. E.

In: Journal of Magnetism and Magnetic Materials, Vol. 298, No. 1, 01.03.2006, p. 48-55.

Research output: Contribution to journalArticle

Wang, L. M. ; Lee, Jyh Yi ; Yang, H. C. ; Chen, J. C. ; Liu, Hsiang Lin ; Lu, Kun Sheng ; Horng, Lance ; Horng, H. E. / Angular dependence of tunneling magnetoresistance in La 0.7Sr0.3MnO3 step-edge junctions. In: Journal of Magnetism and Magnetic Materials. 2006 ; Vol. 298, No. 1. pp. 48-55.
@article{3a19672dd36e4d5fbab8d9a694944545,
title = "Angular dependence of tunneling magnetoresistance in La 0.7Sr0.3MnO3 step-edge junctions",
abstract = "La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (0 0 1) SrTiO3 substrates with a high step-edge angle. In the measurement of magnetoresistance (MR) ratio versus external magnetic field H, butterfly-like MR curves are clearly observed. The MR(H) curves vary with θ, the angle between the applied magnetic field and the current direction in the substrate plane, showing anisotropic MR properties. A much broader MR(H) response is observed for the configuration of H perpendicular to the substrate plane. Additionally, the maxima-MR field Hp almost coincides with the coercive field Hc for θ<60° but obeys a different form from Hc(θ). The high-field junction resistance shows an intrinsic sin2θ angular dependence, while the low-field resistance shows an extrinsic cos(4θ) angular dependence. The distinctive features are mainly due to the induced magnetization anisotropy in the artificial steps of grain boundaries.",
keywords = "Magnetic properties of thin films, Magnetic thin film devices, Tunneling",
author = "Wang, {L. M.} and Lee, {Jyh Yi} and Yang, {H. C.} and Chen, {J. C.} and Liu, {Hsiang Lin} and Lu, {Kun Sheng} and Lance Horng and Horng, {H. E.}",
year = "2006",
month = "3",
day = "1",
doi = "10.1016/j.jmmm.2005.03.005",
language = "English",
volume = "298",
pages = "48--55",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Angular dependence of tunneling magnetoresistance in La 0.7Sr0.3MnO3 step-edge junctions

AU - Wang, L. M.

AU - Lee, Jyh Yi

AU - Yang, H. C.

AU - Chen, J. C.

AU - Liu, Hsiang Lin

AU - Lu, Kun Sheng

AU - Horng, Lance

AU - Horng, H. E.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (0 0 1) SrTiO3 substrates with a high step-edge angle. In the measurement of magnetoresistance (MR) ratio versus external magnetic field H, butterfly-like MR curves are clearly observed. The MR(H) curves vary with θ, the angle between the applied magnetic field and the current direction in the substrate plane, showing anisotropic MR properties. A much broader MR(H) response is observed for the configuration of H perpendicular to the substrate plane. Additionally, the maxima-MR field Hp almost coincides with the coercive field Hc for θ<60° but obeys a different form from Hc(θ). The high-field junction resistance shows an intrinsic sin2θ angular dependence, while the low-field resistance shows an extrinsic cos(4θ) angular dependence. The distinctive features are mainly due to the induced magnetization anisotropy in the artificial steps of grain boundaries.

AB - La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been fabricated on step-edge (0 0 1) SrTiO3 substrates with a high step-edge angle. In the measurement of magnetoresistance (MR) ratio versus external magnetic field H, butterfly-like MR curves are clearly observed. The MR(H) curves vary with θ, the angle between the applied magnetic field and the current direction in the substrate plane, showing anisotropic MR properties. A much broader MR(H) response is observed for the configuration of H perpendicular to the substrate plane. Additionally, the maxima-MR field Hp almost coincides with the coercive field Hc for θ<60° but obeys a different form from Hc(θ). The high-field junction resistance shows an intrinsic sin2θ angular dependence, while the low-field resistance shows an extrinsic cos(4θ) angular dependence. The distinctive features are mainly due to the induced magnetization anisotropy in the artificial steps of grain boundaries.

KW - Magnetic properties of thin films

KW - Magnetic thin film devices

KW - Tunneling

UR - http://www.scopus.com/inward/record.url?scp=27744446276&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27744446276&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2005.03.005

DO - 10.1016/j.jmmm.2005.03.005

M3 - Article

AN - SCOPUS:27744446276

VL - 298

SP - 48

EP - 55

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 1

ER -