Angle-Dependent Conductivity in MoS2 Field-Effect Transistors with Bi Contacts

Han Chieh Lo; Tilo H. Yang; Edmayelle Alforja; Ming Hao Liu; Min Hung Lee; Yann Wen Lan

doi:10.1109/EDTM65772.2026.11497072

Angle-Dependent Conductivity in MoS₂ Field-Effect Transistors with Bi Contacts

Han Chieh Lo^*
, Tilo H. Yang
, Edmayelle Alforja
, Ming Hao Liu
, Min Hung Lee
, Yann Wen Lan

^*Corresponding author for this work

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The directional dependence of single crystalline molybdenum disulfide (MoS₂) critically influences its electronic transport properties. Recent advances in contact engineering have enabled ultralow contact resistance in MoS₂ field-effect transistors (FETs) using semi-metal bismuth (Bi) contacts. In this work, we systematically investigate the angle-dependent conductivity of Bi-contacted MoS₂ FETs by varying the relative orientation between the electrodes and the MoS₂ lattice. The conductivity exhibits a continuous angular dependence, reaching a maximum at 0° and minimum at 30°, with nearly a twofold enhancement at the optimal alignment. These results demonstrate that precise control of contact orientation is essential for realizing high-performance two-dimensional devices and provide valuable guidelines for designing next-generation heterogeneous integrated circuits with enhanced energy efficiency and computational speed.

Original language	English
Title of host publication	10th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798331585983
DOIs	https://doi.org/10.1109/EDTM65772.2026.11497072
Publication status	Published - 2026
Event	10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026 - Penang, Malaysia Duration: 2026 Mar 1 → 2026 Mar 4

Publication series

Name	10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026

Conference

Conference	10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026
Country/Territory	Malaysia
City	Penang
Period	2026/03/01 → 2026/03/04

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Contact Engineering
Transistors
Transition-metal dichalcogenides
Twist-angle dependent
Two-dimensional material

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/EDTM65772.2026.11497072

Cite this

Lo, H. C., Yang, T. H., Alforja, E., Liu, M. H., Lee, M. H., & Lan, Y. W. (2026). Angle-Dependent Conductivity in MoS₂ Field-Effect Transistors with Bi Contacts. In 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026 (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM65772.2026.11497072

Angle-Dependent Conductivity in MoS₂ Field-Effect Transistors with Bi Contacts. / Lo, Han Chieh; Yang, Tilo H.; Alforja, Edmayelle et al.
10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. Institute of Electrical and Electronics Engineers Inc., 2026. (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lo, HC, Yang, TH, Alforja, E, Liu, MH, Lee, MH & Lan, YW 2026, Angle-Dependent Conductivity in MoS₂ Field-Effect Transistors with Bi Contacts. in 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026, Institute of Electrical and Electronics Engineers Inc., 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026, Penang, Malaysia, 2026/03/01. https://doi.org/10.1109/EDTM65772.2026.11497072

Lo HC, Yang TH, Alforja E, Liu MH, Lee MH , Lan YW. Angle-Dependent Conductivity in MoS₂ Field-Effect Transistors with Bi Contacts. In 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. Institute of Electrical and Electronics Engineers Inc. 2026. (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026). doi: 10.1109/EDTM65772.2026.11497072

Lo, Han Chieh ; Yang, Tilo H. ; Alforja, Edmayelle et al. / Angle-Dependent Conductivity in MoS₂ Field-Effect Transistors with Bi Contacts. 10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026. Institute of Electrical and Electronics Engineers Inc., 2026. (10th IEEE Electron Devices Technology and Manufacturing Conference: Emerging Semiconductor Devices and Manufacturing Technologies, EDTM 2026).

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abstract = "The directional dependence of single crystalline molybdenum disulfide (MoS2) critically influences its electronic transport properties. Recent advances in contact engineering have enabled ultralow contact resistance in MoS2 field-effect transistors (FETs) using semi-metal bismuth (Bi) contacts. In this work, we systematically investigate the angle-dependent conductivity of Bi-contacted MoS2 FETs by varying the relative orientation between the electrodes and the MoS2 lattice. The conductivity exhibits a continuous angular dependence, reaching a maximum at 0° and minimum at 30°, with nearly a twofold enhancement at the optimal alignment. These results demonstrate that precise control of contact orientation is essential for realizing high-performance two-dimensional devices and provide valuable guidelines for designing next-generation heterogeneous integrated circuits with enhanced energy efficiency and computational speed.",

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AU - Lan, Yann Wen

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