Analysis of tunable transmission properties in photonic crystals containing doped semiconductor

Yang Hua Chang*, Ming De Ou, Chien Jang Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We investigate the tunable transmission properties in a photonic crystal (PC) that contains doped semiconductor, n-GaAs, as a defect layer. With the existence of n-GaAs, the defect modes can be tuned by external magnetic field, doping concentration, and thickness of the defect layer. Among these three factors, the thickness of the defect layer is the most effective one. The analysis made is the near infrared region and the results are of technical use in the design of a filter with narrowband transmittance peaks.

Original languageEnglish
Pages (from-to)167-171
Number of pages5
JournalOptics Communications
Volume321
DOIs
Publication statusPublished - 2014 Jun 15

Keywords

  • Photonic crystal
  • Transfer matrix method
  • Tunable transmission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

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