Analysis of tunable transmission properties in photonic crystals containing doped semiconductor

Yang Hua Chang, Ming De Ou, Chien-Jang Wu

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    We investigate the tunable transmission properties in a photonic crystal (PC) that contains doped semiconductor, n-GaAs, as a defect layer. With the existence of n-GaAs, the defect modes can be tuned by external magnetic field, doping concentration, and thickness of the defect layer. Among these three factors, the thickness of the defect layer is the most effective one. The analysis made is the near infrared region and the results are of technical use in the design of a filter with narrowband transmittance peaks.

    Original languageEnglish
    Pages (from-to)167-171
    Number of pages5
    JournalOptics Communications
    Volume321
    DOIs
    Publication statusPublished - 2014 Jun 15

    Fingerprint

    Photonic crystals
    doped crystals
    photonics
    Semiconductor materials
    Defects
    defects
    narrowband
    transmittance
    Doping (additives)
    Magnetic fields
    Infrared radiation
    filters
    magnetic fields
    crystals
    gallium arsenide

    Keywords

    • Photonic crystal
    • Transfer matrix method
    • Tunable transmission

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Physical and Theoretical Chemistry
    • Electrical and Electronic Engineering

    Cite this

    Analysis of tunable transmission properties in photonic crystals containing doped semiconductor. / Chang, Yang Hua; Ou, Ming De; Wu, Chien-Jang.

    In: Optics Communications, Vol. 321, 15.06.2014, p. 167-171.

    Research output: Contribution to journalArticle

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    AB - We investigate the tunable transmission properties in a photonic crystal (PC) that contains doped semiconductor, n-GaAs, as a defect layer. With the existence of n-GaAs, the defect modes can be tuned by external magnetic field, doping concentration, and thickness of the defect layer. Among these three factors, the thickness of the defect layer is the most effective one. The analysis made is the near infrared region and the results are of technical use in the design of a filter with narrowband transmittance peaks.

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