Analysis of Si:C on relaxed SiGe by reciprocal space mapping for MOSFET applications

Min-Hung Lee, P. G. Chen, S. T. Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Silicon-germanium (SiGe) or siliconcarbon alloys (Si:C) are used as embedded stressors in silicon devices since they increase the channel strain and the performance as a result of the lattice mismatch. The strain properties of silicon with carbon doped on a relaxed SiGe virtual substrate are examined using reciprocal space mapping. Due to the ~52% lattice mismatch between silicon and carbon, the silicon with a carbon-doped surface channel is under greater strain than it on a relaxed SiGe virtual substrate. This suggests that the carrier mobility could be significantly enhanced. The extracted electron mobility of a n-type metal-oxide-semiconductor field-effect transistor (MOSFET) device with 0.25% carbon shows the enhancement of 22% and 65% for the peak mobility and a large electric field (1 MV/cm), respectively.

Original languageEnglish
JournalECS Journal of Solid State Science and Technology
Volume3
Issue number7
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Germanium
MOSFET devices
Silicon
Carbon
Lattice mismatch
Electron mobility
Carrier mobility
Substrates
Electric fields

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Analysis of Si:C on relaxed SiGe by reciprocal space mapping for MOSFET applications. / Lee, Min-Hung; Chen, P. G.; Chang, S. T.

In: ECS Journal of Solid State Science and Technology, Vol. 3, No. 7, 01.01.2014.

Research output: Contribution to journalArticle

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