Analysis of Si

C on relaxed SiGe by reciprocal space mapping for MOSFET applications

M. H. Lee, P. G. Chen, S. T. Chang

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    Silicon-germanium (SiGe) or siliconcarbon alloys (Si:C) are used as embedded stressors in silicon devices since they increase the channel strain and the performance as a result of the lattice mismatch. The strain properties of silicon with carbon doped on a relaxed SiGe virtual substrate are examined using reciprocal space mapping. Due to the ~52% lattice mismatch between silicon and carbon, the silicon with a carbon-doped surface channel is under greater strain than it on a relaxed SiGe virtual substrate. This suggests that the carrier mobility could be significantly enhanced. The extracted electron mobility of a n-type metal-oxide-semiconductor field-effect transistor (MOSFET) device with 0.25% carbon shows the enhancement of 22% and 65% for the peak mobility and a large electric field (1 MV/cm), respectively.

    Original languageEnglish
    JournalECS Journal of Solid State Science and Technology
    Volume3
    Issue number7
    DOIs
    Publication statusPublished - 2014

    Fingerprint

    Germanium
    MOSFET devices
    Silicon
    Carbon
    Lattice mismatch
    Electron mobility
    Carrier mobility
    Substrates
    Electric fields

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Cite this

    Analysis of Si : C on relaxed SiGe by reciprocal space mapping for MOSFET applications. / Lee, M. H.; Chen, P. G.; Chang, S. T.

    In: ECS Journal of Solid State Science and Technology, Vol. 3, No. 7, 2014.

    Research output: Contribution to journalArticle

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    abstract = "Silicon-germanium (SiGe) or siliconcarbon alloys (Si:C) are used as embedded stressors in silicon devices since they increase the channel strain and the performance as a result of the lattice mismatch. The strain properties of silicon with carbon doped on a relaxed SiGe virtual substrate are examined using reciprocal space mapping. Due to the ~52{\%} lattice mismatch between silicon and carbon, the silicon with a carbon-doped surface channel is under greater strain than it on a relaxed SiGe virtual substrate. This suggests that the carrier mobility could be significantly enhanced. The extracted electron mobility of a n-type metal-oxide-semiconductor field-effect transistor (MOSFET) device with 0.25{\%} carbon shows the enhancement of 22{\%} and 65{\%} for the peak mobility and a large electric field (1 MV/cm), respectively.",
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