Abstract
Three conventional hot-carrier (HC) stress conditions (i.e. stress at Vgs ≈ Vth, Vgs ≈ Vds/2, and Vgs = Vds) have been studied for a quarter-micrometer level surface-channel pMOSFET devices. It is shown that stress at Vgs ≈ Vth results in the worst-case damage, in which a 'turn-around' behavior for device parameters (such as Idsat, Vth, and gm) has been observed (this is not seen in 0.35-μm or longer p-channel devices to the best of our knowledge). This turn-around behavior could be explained by a two-step degradation model (i.e. electron trapping and charge compensation between electron trapping and interface-state generation). Moreover, similar to long-channel pMOSFET devices though the dominant degradation mechanism is somewhat different, DC device lifetime for 0.25-μm pMOSFET devices should be evaluated using gate current as a predictor rather than substrate current that has been suggested by some researchers.
| Original language | English |
|---|---|
| Pages (from-to) | 82-85 |
| Number of pages | 4 |
| Journal | International Symposium on VLSI Technology, Systems, and Applications, Proceedings |
| Publication status | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan Duration: 1999 Jun 7 → 1999 Jun 10 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering