Abstract
The effective plasma frequency (EPF) in an extrinsic photonic crystal is theoretically analyzed. The extrinsic PC is a single homogeneous doped semiconductor (n-GaAs) that is influenced by an externally and periodically applied magnetic field. Based on the calculated photonic band structure, we investigate the magnetic-field dependence of EPF. The results reveal that the EPF will be smaller in the absence of the magnetic field and lowered down when the magnetic field increases. The EPF is shown to be a decreasing function of the filling factor of the magnetized region. Additionally, investigation of the first passband and band gap is also given. The study illustrates that such an extrinsic PC possesses tunable optical properties that are of technical use in semiconductor photonic applications.
Original language | English |
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Article number | 6651744 |
Journal | IEEE Photonics Journal |
Volume | 5 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2013 |
Keywords
- Doped semiconductor
- Effective plasma frequency
- Extrinsic photonic crystal
- Transfer matrix method
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering